Motorola Corporation

Judy L Sutor

Stephen P Robb

Lewis E Terry

John P Phipps

Robert S Wrathall

A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes are formed back-to-back in polysilicon. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.

Method for making semiconductor device having high energy sustaining

Semiconductor device having high energy sustaining capability and a

A CMOS operational amplifier comprises an input stage for receiving first and second potentials, a bias stage and first and second gain stages. In order to improve the frequency response, capacitors are employed to provide positive feedback. The biasing stage maintains the output in its active region, and avoids the necessity of external biasing.

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Chandler, AZ, United States of America

Judy L Sutor