International Business Machines Corporation

Globalfoundries U.S. Inc.

Globalfoundries Inc.

Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Advanced Micro Devices Corporation

Samsung Electronics Co., Ltd.

Infineon Technologies Ag

Infineon Technologies North America Corp.

Judson Robert Holt

Vibhor Jain

Alexander M Derrickson

Henry K Utomo

Timothy James McArdle

Viorel C Ontalus

Keith Howard Tabakman

John Joseph Pekarik

Alexander Reznicek

George Robert Mulfinger

Jagar Singh

Yung Fu Chong

Qizhi Liu

Thomas N Adam

Ashima B Chakravarti

Kevin K Chan

Zhijiong Luo

Haiting Wang

Shesh Mani Pandey

Abhishek Dube

Dureseti Chidambarrao

Kern Rim

Dominic Joseph Schepis

Hong Yu

Rishikesh Krishnan

Yusheng Bian

Renee Tong Mo

Shogo Mochizuki

Arvind Kumar

Sipeng Gu

Huajie Chen

Michael Patrick Chudzik

Shreesh Narasimha

Brian Joseph Greene

Yann A Astier

Kangguo Cheng

Stephen W Bedell

Yun-Yu Wang

Dae-Gyu Park

Kathryn Turner Schonenberg

Devendra K Sadana

Oleg Gluschenkov

Haining S Yang

Steven M Shank

Shyue Seng Tan

Alvin Jose Joseph

Jeffrey Bowman Johnson

Meikei Ieong

Qiqing Christine Ouyang

Jiehui Shu

Anthony I Chou

Byeong Yeol Kim

Yi Qi

Paul S Chang

Zhenyu Hu

Jin-Ping Han

Xinshu Cai

Huilong Zhu

Junli Wang

Hui Zang

Keith E Fogel

Dechao Guo

Herbert Lei Ho

Richard Stephan Wise

Peter Baars

Scott D Luning

Wesley Charles Natzle

Johnathan E Faltermeier

William K Henson

David Michael Fried

Gregory Gower Freeman

Jin Ping Liu

Rohit Pal

Zhibin Ren

Paul David Agnello

Anthony Gene Domenicucci

Scott Beasor

Ruilong Xie

Ghavam G Shahidi

Ramachandra Divakaruni

Julien Frougier

Balasubramanian Pranatharthiharan

Jack Oon Chu

Amlan Majumdar

Sanjay C Mehta

Pranita Kerber

Unoh Kwon

Thomas W Dyer

Christos Dimitrios Dimitrakopoulos

Conal Eugene Murray

Gauri V Karve

Victor Chan

Bartlomiej Jan Pawlak

Werner A Rausch

Andreas Daniel Stricker

Sunfei Fang

Jin-bum Kim

Diane Catherine Boyd

Daniel J Jaeger

Jianwei Peng

An integrated circuit (IC) device is disclosed which includes a first transistor over a substrate. The first transistor includes a gate over the substrate and between a source region and a drain region. The transistor further includes a first region of vertically-graded silicon germanium ('SiGe') adjacent a first side of a channel under the gate, and a second region of vertically-graded SiGe adjacent a second side of the channel. The channel includes substantially uniformly-graded SiGe.

IC device with vertically-graded silicon germanium region adjacent device channel and method for forming

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.

Lateral bipolar transistors

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.

Lateral bipolar transistors with gate structure aligned to extrinsic base

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.

Lateral bipolar transistor with gated collector

Structures including an electro-absorption modulator and methods of forming such structures. The structure comprises a waveguide core including a first tapered section, a second tapered section, and a longitudinal axis. The first tapered section and the second tapered section are aligned along the longitudinal axis. The structure further comprises a first waveguide taper overlapping the first tapered section of the waveguide core, a second waveguide taper overlapping the second tapered section of the waveguide core, and a multiple-layer structure on the waveguide core between the first waveguide taper and the second waveguide taper.

Electro-absorption modulators with stacked waveguide tapers

Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.

Bipolar transistor structure on semiconductor fin and methods to form same

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

Lateral bipolar transistor

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises silicon based material; an intrinsic base; and an extrinsic base overlapping the emitter region and the intrinsic base; an extrinsic base overlapping the emitter region and the intrinsic base; and an inverted 'T' shaped spacer which separates the emitter region from the extrinsic base and the collector region from the emitter region.

Transistor with wrap-around extrinsic base

Structures including a vertical heterojunction bipolar transistor and methods of forming a structure including a vertical heterojunction bipolar transistor. The structure comprises a semiconductor substrate including a trench, a first semiconductor layer including a portion adjacent to the trench, a dielectric layer between the first semiconductor layer and the semiconductor substrate, and a second semiconductor layer in the trench. The dielectric layer has an interface with the first semiconductor layer, and the second semiconductor layer includes a portion that is recessed relative to the interface. The structure further comprises a vertical heterojunction bipolar transistor including a collector in the portion of the second semiconductor layer.

Transistor integration on a silicon-on-insulator substrate

The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor on insulator material; an emitter region above the base region; and a collector region under the base region and within a cavity of a buried insulator layer.

Bipolar transistors

Disclosed is a semiconductor structure including a lateral heterojunction bipolar transistor (HBT). The structure includes a substrate (e.g., a silicon substrate), an insulator layer on the substrate, and a semiconductor layer (e.g., a silicon germanium layer) on the insulator layer. The structure includes a lateral HBT with three terminals including a collector, an emitter, and a base, which is positioned laterally between the collector and the emitter and which can include a silicon germanium intrinsic base region for improved performance. Additionally, the collector and/or the emitter includes: a first region, which is epitaxially grown within a trench that extends through the semiconductor layer and the insulator layer to the substrate; and a second region, which is epitaxially grown on the first region. The connection(s) of the collector and/or the emitter to the substrate effectively form thermal exit path(s) and minimize self-heating. Also disclosed is a method for forming the structure.

Lateral heterojunction bipolar transistor with emitter and/or collector regrown from substrate and method

Disclosed are a structure with a substrate-embedded waveguide and a method of forming the structure. The waveguide includes cladding material lining a trench in a substrate, a core in the trench on the cladding material, and at least one cavity within the core. Each cavity extends from one end of the core toward the opposite end and contains a low refractive index material or is under vacuum so the waveguide is an arrow waveguide. An insulator layer is on the substrate and extends laterally over the waveguide and a semiconductor layer is on the insulator layer. Additionally, depending upon the embodiment, an additional waveguide can be aligned above the substrate-embedded waveguide either on the isolation region or on a waveguide extender that extends at least partially through the isolation region and the insulator layer to the waveguide.

Structure with substrate-embedded arrow waveguide and method

The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with thermal conductor and methods of manufacture. The structure includes: a base formed within a semiconductor substrate; a thermal conductive material under the base and extending to an underlying semiconductor material; an emitter on a first side of the base; and a collector on a second side of the base.

Bipolar transistor with thermal conductor

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Wappingers Falls, NY, United States of America

Judson Robert Holt