US Government As Represented by the Secretary of the Army

Judith T McCullen

Bohdan J Dobriansky

Robert Reams

Timothy J Mermagen

Jonathan Terrell

Bernard J Rod

Robert B Reams, Jr

Theodore V Blomquist

Raymond Goetz

A module and a method of making the module is disclosed. The module is fod from a semiconductor and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.

Bonding of silicon carbide chip with a semiconductor

A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.

Bonding of silicon carbide directly to a semiconductor substrate by

An RF-insensitive semiconductor slapper ignitor is created using a silicon ubstrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.

Semiconductor slapper

An RF-insensitive semiconductor ignitor and primer cup assembly is created sing a double polished n-type silicon substrate having its top and bottom surfaces partially metallized to form Schottky barrier diodes. The metallized portion of the back side of the substrate is placed in contact with a conductive surface, and means are provided to electrically isolate those portions of the substrate which have not been metallized from both the metallized portions and the conductive surface. In one embodiment, the isolating means is an integral oxide ring which extends from the periphery of the contact metal to the edge of the substrate. In another embodiment, the means of isolation is a separate plastic ring.

Semiconductor ignitor

A shadow mask for sputtering is formed from a single crystal silicon wafer which is mechanically and chemically polished to produce top and bottom surfaces which are substantially flat and parallel to one another. The wafer is provided with one or more pyramidal etch pits which are arranged in a pattern. Each pit has a substantially square cross-section on the top surface, and a smaller substantially square cross-section on the bottom surface to produce an aperture in the wafer. In use, the wafer is clamped against a flat substrate with its apertures opening toward the evaporant beam. After use, the deposited species may be cleaned from the wafer using suitable etchants which render the wafer unharmed, and therefore reusable.

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Wheaton, MD, United States of America

Judith T McCullen