Infineon Technologies Ag

Judith Specht

Frank Dieter Pfirsch

Franz-Josef Niedernostheide

Roman Baburske

Christian Jaeger

Alexander Philippou

Christian Robert Mueller

Vera Van Treek

A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.

Semiconductor die, semiconductor device and IGBT module

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Unterhaching, Germany

Judith Specht