Texas Instruments Corporation

Judith C Frederic

Simon Joshua Jacobs

Mark Henry Strumpell

Jason Michael Neidrich

Michael Richard Douglass

Lisa Ann Wesneski

Robert L Adams

Paul G Sudak

Linda M Wills

William D Carter

Jason M Neidrich

According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.

Antireflective coating for semiconductor devices and method for the same

A method and system of reducing the permanent accumulated deformation of a deflectable member of a micromechanical device through thermal stabilization. The accumulated deformation is due to the repeated bending or twisting of a flexible component of the micromechanical deice typically the repetitive deformation of a flexible hinge connecting a rigid member to substrate. After the device is fabricated, passivated (,), and packaged (,), the packaged device is baked (,) at a temperature of at least 120&deg; C. A 150&deg; C. bake for 12 to 16 hours is preferred. Lower temperatures required longer baking periods.

Reduced deformation of micromechanical devices through thermal stabilization

Growing community of inventors

Plano, TX, United States of America

Judith C Frederic