International Business Machines Corporation

Judith A Wright

Chung H Lam

David K Lord

Timothy Harrison Daubenspeck

Christopher David Muzzy

Paul Stephen McLaughlin

Jean E Wynne

Dae Young Jung

A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The crack stop void is formed simultaneously with the formation of an interconnect structure.

Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses

A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

Semiconductor trench capacitor cell having a buried strap

Method of making semiconductor trench capacitor cell having a buried

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Essex Junction, VT, United States of America

Judith A Wright