American Telephone & Telegraph Co., At&t Bell Laboratories

Lucent Technologies Inc.

At&t Bell Laboratories

Judith A Long

Wilbur D Johnston, Jr

Daniel P Wilt

Robert F Karlicek, Jr

Shobha Singh

Bertram Schwartz

Wilbur Dexter Johnston, Jr

Albert T Macrander

It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1&times;10,ohm-cm have been achieved as compared to resistivities on the order of 5&times;10,ohm-cm for other types of semi-insulating epitaxial indium phosphide.

Semi-insulated indium phosphide based compositions

High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Method of controlling dopant incorporation in high resistivity In-based

High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

Semiconductor devices employing high resistivity in-based compound group

Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.

Method of making indium phosphide devices

It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.

MOCVD of semi-insulating indium phosphide based compositions

High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

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Millburn, NJ, United States of America

Judith A Long