United Microelectronics Corp.

Juan-Yi Chen

Der-Yuan Wu

Hong-Tsz Pan

Yi-Hsing Chen

Chun-Jen Weng

Cedric Lee

Lawrence Y Lin

Yeong-Song Yen

Chia-Jui Liu

Chuan-Kai Wang

Jackson Lin

Ying-Chung Tseng

Ming-Yi Lin

A method of fabricating spacers is provided. The method includes providing a substrate with a device structure formed thereon. The device structure comprises a gate structure and a pair of source/drain regions. Then, a spacer material layer is formed over the substrate to cover the substrate and the device structure. Thereafter, an etching process is performed to remove a portion of the spacer material layer so that spacers are formed on the respective sidewalls of the gate structure. After that, a plasma treatment step is performed to form a spacer protection layer on the surface of the substrate, the spacers and the gate structure.

Method of fabricating spacers and cleaning method of post-etching and semiconductor device

A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.

Gap-filling process

Growing community of inventors

Chiai, Taiwan

Juan-Yi Chen