Applied Materials, Inc.

Other

Juan Carlos Rocha

Amit Kumar Bansal

Tuan Anh Nguyen

Sanjeev Baluja

Deenesh Padhi

Karthik Janakiraman

Mukund Srinivasan

Zheng John Ye

Ganesh Balasubramanian

Thomas E Nowak

Hari K Ponnekanti

Dmitry A Dzilno

David T Blahnik

Mohamad A Ayoub

Mark A Fodor

Hang Yu

Yao-Hung Yang

Daemian Raj Benjamin Raj

Shailendra Srivastava

Andrzej Kaszuba

Chiu Chan

Dustin Wenpin Ho

Siu Fai Cheng

Nikhil Sudhindrarao Jorapur

Robert Kim

Ndanka O Mukuti

Binh Nguyen

Jun Ma

Jian Li

Kartik Bhupendra Shah

Tza-Jing Gung

Jason M Schaller

Jay D Pinson, Ii

Xinhai Han

Abdul Aziz Khaja

Dale Robert Du Bois

Zubin Huang

Diwakar N Kedlaya

Edward P Hammond

Tejas Ulavi

Scott A Hendrickson

Masaki Ogata

Nitin Pathak

Yongjing Lin

Fang Ruan

Liliya Krivulina

Chidambara A Ramalingam

Yusheng Zhou

Jonathan Robert Bakke

Sarah Langlois White

Katty Marie Lydia Gamon Guyomard

Joseph M Polese

Dale Du Bois

The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

Baffle implementation for improving bottom purge gas flow uniformity

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

Methods and apparatus for controlling RF parameters at multiple frequencies

Embodiments of the present disclosure generally relate to substrate support assemblies used in semiconductor device manufacturing. In one embodiment, a substrate support includes a ceramic body having at least one aperture formed therein defined by a sidewall. A plurality of recesses extend into the sidewall, a rod member is disposed in the at least one aperture, and an eyelet member is circumferentially disposed about the rod member. The eyelet member has a plurality of protrusions extending outwardly therefrom, each disposed in a corresponding recess of the plurality of recesses. A first portion of each protrusion is in contact with a sidewall of the respective recess of the ceramic body and a second portion of each protrusion is separated by a gap from the sidewall of the respective recess of the ceramic body. A first portion of a brazing material is disposed between an upper surface of the at least one aperture and an end of the rod member.

Substrate supports including metal-ceramic interfaces

Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

Ground path systems for providing a shorter and symmetrical ground path

Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of SiN. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

On stack overlay improvement for 3D NAND

Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

Shadow ring for modifying wafer edge and bevel deposition

Systems and methods used to deliver a processing gas having a desired diborane concentration to a processing volume of a processing chamber are provided herein. In one embodiment a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, individual ones of the plurality of windows are disposed at opposite ends of the body and the body and the plurality of windows collectively define a cell volume. The borane concentration sensor further includes a radiation source disposed outside of the cell volume proximate to a first window of the plurality of windows, and a radiation detector disposed outside the cell volume proximate to a second window of the plurality of windows.

Precursor delivery system and methods related thereto

A system for processing a substrate is provided including a first planar motor, a substrate carrier, a first processing chamber, and a first lift. The first planar motor includes a first arrangement of coils disposed along a first horizontal direction, a top surface parallel to the first horizontal direction, a first side, a second side. The substrate carrier has a substrate supporting surface parallel to the first horizontal direction. The first processing chamber has an opening to receive a substrate disposed on the substrate carrier. The first lift includes a second planar motor having a second arrangement of coils disposed along the first horizontal direction. A top surface top surface of the second planar motor is parallel to the first horizontal direction. The first lift is configured to move the top surface of the second planar motor between a first vertical location and a second vertical location.

Semiconductor process equipment

A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.

Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same

The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

Dynamic wafer leveling/tilting/swiveling steps for use during a chemical vapor deposition process

Devices and methods are provided for monitoring low-level microwave excursions from a UV curing system to determine if equipment is damaged, such as screen tears or improper assembly of UV lampheads. A radio frequency (RF) detector may be used to detect microwaves in a range of about 0.2-5 mW/cm, wherein the RF detector comprises an antenna with a hoop shaped portion, a circuit board having a diode detector and an amplifier circuit, a housing, and a bracket coupled to the housing that is suitable for coupling the RF detector to the UV curing system. An alarm threshold may also be set, which can be correlated to microwave levels at or below levels that could cause damage to semiconductor devices being processed. A substrate processing system comprising an RF detector is also provided.

Microwave excursion detection for semiconductor processing

A sanding system suitable for drywall sanding has a foam sanding block that fits into a hollow housing such that a gap is left around most of the perimeter of the sanding block and the housing near the plane of sanding. Some regions of the perimeter are dimensioned relative to the sanding block such as to not leave a gap but instead are such as to provide a friction fit between the housing and the sanding block.

Sanding system with vacuum

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San Carlos, CA, United States of America

Juan Carlos Rocha