Samsung Electronics Co., Ltd.

Ju-Youn Kim

Jong-Mil Youn

Tae-Won Ha

Hyung-Soon Jang

Je-Don Kim

Kyoung-hwan Yeo

Jae-yup Chung

Il-ryong Kim

Seok-Jun Won

Hyun-Jo Kim

Kwang-You Seo

Jong-Ho Lee

Jin-Wook Kim

Hyun-Min Choi

Ji-hoon Yoon

Min-seong Lee

Ji-hwan An

Min-Choul Kim

Hwa-Sung Rhee

Min-Woo Song

Yong-Ho Ha

Young-Hun Kim

Jung-Min Park

Hye-Lan Lee

Sang-Hyun Woo

Baik-Min Sung

Sung-kee Han

Choel-Hwyi Bae

Chang-Min Hong

Weon-Hong Kim

Cheong-Sik Yu

Yong-gi Jeong

Sang-jung Kang

Wei-Hsiung Tseng

Sang-min Lee

Jeong-Nam Han

Kwang-sub Yoon

Dae-Jin Kwon

Koung-min Ryu

Byung-Sung Kim

Bong-Seok Suh

Mu-kyeng Jung

In-Gu Yoon

Jun-sun Hwang

Jae-Kyung Seo

Min-Yeop Park

Kwang-Yong Jang

Suk-Hoon Kim

Sang-Min Yoo

Hyung-Joo Na

Sung-Moon Lee

Joo-Ho Jung

Eui-Chul Hwang

Kwang-Yul Lee

Bo-Soon Kim

Sang-Duk Park

Jong-Joon Park

A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Semiconductor device including a first fin active region, a second fin active region and a field region

Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.

Semiconductor device

A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.

Semiconductor devices

An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Integrated circuit device

A semiconductor device includes a substrate including first, second, third, and fourth regions, a first gate structure on the first region, a second gate structure on the second region, a third gate structure on the third region, and a fourth gate structure on the fourth region. The first gate structure includes a first gate insulating layer, a first material layer, and a first gate electrode layer. The second gate structure includes a second gate insulating layer, a second material layer, and a second gate electrode layer. The third gate structure includes a third gate insulating layer, a third material layer, and a third gate electrode layer. The fourth gate structure includes a fourth gate insulating layer and a fourth gate electrode layer. The first, second, and third material layers have different thicknesses. The first material layer includes a lower metal layer, an upper metal layer, and a polysilicon layer therebetween.

An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.

An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.

Semiconductor device including a first fin active region and a second fin active region

Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer.

Semiconductor devices and fabricating methods thereof

A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device includes: a semiconductor substrate including an active region and a gate structure on the active region. The gate structure includes a gate insulating film; a work function adjusting film on the first gate insulating film; a separation film on the work function adjusting film; and an oxygen capturing film on the separation film and configured to capture oxygen introduced from the outside of the first gate structure. The oxygen capturing film is spaced apart from a top surface of the first gate insulating film by about 70 &#x212b; to about 80 &#x212b;.

Semiconductor devices including gate structures with oxygen capturing films

Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern

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Suwon-si, South Korea

Ju-Youn Kim