United Microelectronics Corp.

Ju-Te Chen

Wen-Tsung Wu

Ching-Hsing Hsieh

Chung-An Chen

Chen-Hui Huang

Chia-Chi Chang

Shih-Ming Yen

Tzu-Ping Kao

Cheng-Hsien Chen

Chi-Ching Huang

An automatic detecting method and an automatic detecting apparatus using the same are provided. The automatic detecting apparatus includes an inputting unit, a dividing unit, a contouring unit, a range analyzing unit, a boundary analyzing unit, an edge detecting unit, an expanding unit and an overlapping unit. The dividing unit is used for dividing an overlooking image into four clusters via a clustering algorithm. The contouring unit is used for obtaining a contour. The range analyzing unit is used for obtaining a detecting range. The boundary analyzing unit is used for obtaining a circular boundary in the detecting range. The edge detecting unit is used for obtaining a plurality of edges in the circular boundary. The expanding unit is used for expanding the edges to obtain a plurality of expanded edges. The overlapping unit is used for overlapping the expanded edges and the contour to obtain a defect pattern.

Automatic detecting method and automatic detecting apparatus using the same

The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.

Exposure method

A prediction model for exposure dose is indicated by the following formula, E=E+E, wherein E represents an optimized exposure dose, Erepresents a preset exposure dose of a process control system, and Erepresents an exposure dose compensation value, and=[()/()]&#xd7;(')&#xd7;(),wherein MTTrepresents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDrepresents the actual critical dimension of the mask, X represents the magnification of the mask, Erepresents the actual exposure dose of a previous lot, A&#x2032; represents an experimental value obtained from the results of different lots, Wrepresents the last batch of weights and Wrepresents an average weight, and CD, E, A&#x2032;, Wand Ware set parameters built into the process control system.

Prediction model and prediction method for exposure dose

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Tainan, Taiwan

Ju-Te Chen