Samsung Electronics Co., Ltd.

Ju Seok Lee

Jaeyong Jeong

Sang-Hyun Joo

Kihwan Choi

Kiwhan Song

Kitae Park

Yong Kim

Daeseok Byeon

Donghun Kwak

Seung Bum Kim

Sang-gu Kang

Hee-Won Lee

Dongkyo Shim

Hee-Woong Kang

Ohsuk Kwon

Jung-Ho Song

Hyunjun Yoon

Jae Yong Jeong

Sun Gyung Hwang

Byoung Taek Kim

A memory device includes a memory cell array including a first switch cell, a second switch cell, and a plurality of memory cells disposed between the first the second switch cells and connected to a plurality of word lines, and a control circuit configured to perform a program operation by providing a program voltage to a first word line among the plurality of word lines, a switch voltage to a second word line among the plurality of word lines, and a pass voltage to remaining word lines among the plurality of word lines, wherein the control circuit is configured to turn off the first switch cell and the second switch cell in a first section of the program operation, and configured to turn on the first switch cell and increase the switch voltage in a second section of the program operation later than the first section.

Memory device

A nonvolatile memory system includes a nonvolatile memory device and a memory controller that controls the nonvolatile memory device. The nonvolatile memory device includes multiple memory blocks. Each of the memory blocks includes memory cells. Each of the memory cells has any one of an erase state and one of multiple different program states. An operation method of the nonvolatile memory system includes receiving a physical erase command from an external device. The operation method also includes performing a fast erase operation, responsive to the received physical erase command, with respect to at least one memory block so that first memory cells of the at least one memory block have a fast erase state different from the erase state.

Operation method of nonvolatile memory system that includes erase operations, fast erase operations, program operations and fast program operations

An operating method of a storage device includes simultaneously buffering first data in a first nonvolatile memory device and a second nonvolatile memory device, simultaneously buffering second data in the second nonvolatile memory device and a third nonvolatile memory device, performing a parity operation on the first data and the second data in the second nonvolatile memory device to generate a parity, and programming the first data, the second data, and the parity into the first nonvolatile memory device, the third nonvolatile memory device, and the second nonvolatile memory device, respectively.

Storage device and operating method thereof

An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.

Storage device and operating method of storage device

A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.

Non-volatile memory device and related method of operation

A method of operating a storage device may include receiving a read command and a read address, performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line based on the read address and performing a reliability verification read on unselected memory cells. Data read by the read operation may be output to an external device, and data read by the reliability verification read may be not output to the external device.

Storage devices and methods of operating storage devices

A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.

Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same

A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.

Nonvolatile memory device, memory system comprising same, and method of operating same

A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.

Nonvolatile memory device, memory system, and read method thereof

A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.

Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations

Growing community of inventors

Seoul, South Korea

Ju Seok Lee