Taiwan Semiconductor Manufacturing Comp. Ltd.

Ju-Ru Hsieh

Ren-Hua Guo

Jen-Hao Yang

Chien-Chun Hu

Chen-Liang Chang

Po-Chia Chen

Shun-Yu Chuang

Wei-Tuzo Lin

A method of cleaning a wafer in semiconductor fabrication is provided. The method includes cleaning a wafer using a wafer scrubber. The method further includes moving the wafer scrubber into an agitated cleaning fluid. The method also includes creating a contact between the wafer scrubber and a cleaning stage in the agitated cleaning fluid. In addition, the method includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning fluid.

Method and system for cleaning wafer and scrubber

A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.

Deposition apparatus and method for manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70&#xb0; C. to about 100&#xb0; C. to control a temperature of the precursor gases.

Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same

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Taipei, Taiwan

Ju-Ru Hsieh