Samsung Electronics Co., Ltd.

Ju-Ik Lee

Dong-Wan Kim

Jung-Hoon Han

Sang-Oh Park

Seokho Shin

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

Semiconductor device including base pillar, connection pad, and insulation layer disposed on a substrate

Semiconductor chip and semiconductor package including the same

A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.

Growing community of inventors

Anyang-si, South Korea

Ju-Ik Lee