Applied Materials, Inc.

Ju Ik Kang

Kai Wu

Xi Cen

Nobuyuki Sasaki

Chunming Zhou

Feihu Wang

Peiqi Wang

Tom Ho Wing Yu

Wei Min Chan

Min Heon

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods for low resistivity and stress tungsten gap fill

Methods and apparatus for low resistivity and stress tungsten gap fill

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Seoul, South Korea

Ju Ik Kang