Samsung Electronics Co., Ltd.

Ju Hyung We

Daehyun Kim

Dong-Hyun Im

Sungmi Yoon

Kibum Lee

Jihoon Kim

Yoonyoung Choi

Kyo-Suk Chae

Joonkyu Rhee

Jiyoung Ahn

Yongseok Ahn

Jun-Bum Lee

Myung-Hyun Baek

Youngwook Park

Hyunyong Kim

Minsub Um

Dongsik Kong

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate having a groove therein extending in a first direction, a gate insulating layer in the groove, a first conductive pattern in the groove and on the gate insulating layer, and a word line capping pattern in the groove and on the first conductive pattern. The first conductive pattern may include a first material and may include a first conductive portion adjacent to the word line capping pattern and a second conductive portion adjacent to a bottom end of the groove. A largest dimension of a grain of the first material of the first conductive portion may be equal to or larger than that of the first material of the second conductive portion.

Semiconductor device having conductive portions in a groove and contacting a gate insulating layer

A semiconductor memory device includes a substrate including a device isolation pattern defining an active pattern extending in a first direction and including first and second source/drain regions, a word line extending in a second direction intersecting the first direction, a bit line that is on the word line and electrically connected to the first source/drain region and that extends in a third direction that intersects the first and second directions, a bit-line spacer on a sidewall of the bit line, a storage node contact electrically connected to the second source/drain region and spaced apart from the bit line across the bit-line spacer, and a dielectric pattern between the bit-line spacer and the storage node contact. The bit-line spacer includes a first spacer covering the sidewall of the bit line and a second spacer between the dielectric pattern and the first spacer.

Semiconductor memory device

A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.

Method of fabricating semiconductor device

Semiconductor device and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Ju Hyung We