Skhynix Inc.

Ju Hyuck Kim

Seong Ju Lee

Hyun Seung Kim

A semiconductor device includes an input control signal generation circuit configured to generate an input control signal when performing an internal operation and configured to adjust a time point at which the input control signal is generated, based on whether a frequency of a clock corresponds to a preset frequency range. The semiconductor device includes an output control signal generation circuit configured to generate an output control signal after a latency elapses when performing the internal operation. The semiconductor device includes a pipe latch circuit configured to latch input data based on the input control signal and configured to output the latched input data as output data based on the output control signal.

Semiconductor device including pipe latch circuit

A memory device includes a data pad disposed in a first pad area and configured to receive data, a data strobe pad disposed in the first pad area and configured to receive a data strobe signal, a clock pad disposed in a second pad area adjacent to the first pad area and configured to receive a clock signal, a data conversion circuit disposed in the first pad area and configured to convert the data inputted through the data pad into parallel data based on the data strobe signal, and a data driving circuit disposed in the first pad area and configured to transmit the parallel data through a global input and output line based on the clock signal.

Semiconductor device including input/output pad

A semiconductor device includes an internal clock generation circuit configured to generate first to fourth internal clocks from first and third divided clocks and a ground voltage in first and second modes. The semiconductor device also includes a data processing circuit configured to latch first to fourth internal data according to first to fourth input control signals. The data processing circuit is additionally configured to generate first to fourth output data by determining the output priority of the latched first and third internal data and the latched second and fourth internal data according to the first to fourth internal clocks, first to fourth rising output control signals, and first to fourth falling output control signals.

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Gyeonggi-do, South Korea

Ju Hyuck Kim