Samsung Electronics Co., Ltd.

Seoul National University

Seagate Technology Incorporated

Seagate Technology International

Ju-Hwan Jung

Seung-bum Hong

Hyoung-soo Ko

Hong-sik Park

Chul-min Park

Kyoung-lock Baeck

Dong-Ki Min

Sung-dong Kim

Eun-sik Kim

Hyung-cheol Shin

Hyun-Jung Shin

Jun-Soo Kim

In-kyeong Yoo

Won-Joo Kim

Simon Buehlmann

Dae-young Jeon

Shin-Wook Yi

Yoon-Dong Park

Young-Gu Jin

Sung-hoon Choa

Kyoung-won Na

Yong Kwan Kim

Sung-Dong Suh

Hong-Sik Park

Hyoung-Soo Ko

Seok-yong Hong

Jin-Gyoo Yoo

Sung-Dong Kim

Jong-up Jun

Jung-Hyung Pyo

Dong-Mo Im

Hee-Woo Park

Hiroshige Goto

Yun-seok Kim

Eun-Sik Kim

Seung-Bum 507-1305 Hayan Maeul Hong

Seung-Bum Hong

Chul-Min c/o Samsung Advanced Institute Of Tech Park

Seung-Bum c/o 507-1305 Hayan Maeul Hong

Chul-Min Samsung Advanced Inst Of Techn Park

Kyoung-Lock Baeck

A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same

An optical biosensor may include a biosensing unit, detection unit, and signal processing unit. The biosensing unit may be configured for receiving first and second optical signals (which are generated from a phase-modulated optical signal), outputting a sensing signal by transmitting the first optical signal via a first optical path that includes a sensing resonator, and outputting a reference signal by transmitting the second optical signal via a second optical path that includes a reference resonator. The detection unit may be configured for receiving the sensing signal and the reference signal, detecting a phase element of each of the sensing signal and the reference signal through a signal demodulation operation, and detecting a phase difference between the sensing signal and the reference signal according to the detected phase elements. The signal processing unit may be configured for calculating the concentration of a bio-material based on the detected phase difference.

Optical biosensor and method of operating the same

A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.

Unit pixels, depth sensors and three-dimensional image sensors including the same

Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

Electric field read/write head

A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

Ferroelectric hard disk system

An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head

An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.

Charge-dipole coupled information storage medium

A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Ferroelectric recording medium and writing method for the same

An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.

Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same

A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.

Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same

A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Semiconductor probe with high resolution resistive tip and method of fabricating the same

An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)&#x2267;0.2.

Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head

Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

Semiconductor probe having resistive tip and method of fabricating the same

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Seoul, South Korea

Ju-Hwan Jung