Samsung Electronics Co., Ltd.

Ju-chul Park

Yoon-Dong Park

June-mo Koo

Kyoung-won Na

Deok-kee Kim

Dong-seok Suh

Kyung-Chang Ryoo

Bum-seok Seo

Yoon-Jong Song

Se-Ahn Song

Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.

Non-volatile memory device with data storage layer

Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.

Phase-change memory device

Growing community of inventors

Suwon-si, South Korea

Ju-chul Park