United Microelectronics Corp.

Ju-Bao Zhang

Chi Ren

Zhao-Bing Li

Xiao-Fei Han

Hong Liao

Chao Jiang

Jun Qian

Wen-Wen Gong

A semiconductor device includes at least one wafer and at least one TSV (through silicon via) structure. The at least one wafer each includes a substrate, an isolation structure, and a conductive pad. The isolation structure is formed in the substrate and extends from a first side of the substrate toward a second side opposite to the first side of the substrate. The conductive pad is formed at a dielectric layer disposed on the first side of the substrate, wherein the conductive pad is electrically connected to an active area in the substrate. The at least one TSV structure penetrates the at least one wafer. The conductive pad contacts a sidewall of the at least one TSV structure, and electrically connects the at least one TSV structure and the active area in the substrate. The isolation structure separates from and surrounds the at least one TSV structure.

Semiconductor device with through silicon via structure

Method for manufacturing semiconductor device with through silicon via structure

Semiconductor device with through silicon via structure and method for manufacturing the same

A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region surrounding the first region; forming a gate stack and a dummy gate stack in the first region, wherein the dummy gate stack surrounds the gate stack; forming an oxide layer on an exterior wall and a top surface of the dummy gate stack; forming a dummy conductive layer on the gate stack, the dummy gate stack and the oxide layer, wherein the dummy conductive layer has a concave bowl-shaped top surface in the first region; and performing a chemical mechanical polishing (CMP) process on the dummy conductive layer.

Manufacturing method of semiconductor structure

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a through silicon via hole, an interlayer dielectric, a liner layer and a conductor. The through silicon via hole is formed in the substrate. The interlayer dielectric is formed on the substrate. The interlayer dielectric defines an opening corresponding to the through silicon via hole. The interlayer dielectric comprises a bird beak portion near the through silicon via hole. The liner layer is formed on a bottom and a sidewall of the through silicon via hole. The conductor is filled in the through silicon via hole and the opening.

Semiconductor structure and method for manufacturing the same

Growing community of inventors

Singapore, Singapore

Ju-Bao Zhang