Applied Materials, Inc.

Applied Material, Inc.

Jrjyan Jerry Chen

Soo Young Choi

Xiangxin Rui

Lai Zhao

Yujia Zhai

Yan Ye

Robin L Tiner

Tae Kyung Won

Beom Soo Park

Dong-Kil Yim

Qunhua Wang

Wen-Hao Wu

Young Jin Choi

John M White

Steven Verhaverbeke

Robert Jan Visser

Dieter Haas

Byung-Sung Kwak

Akihiro Hosokawa

Bradley Owen Stimson

Makoto Inagawa

Sanjay D Yadav

Ruiping Wang

Shouqian Shao

Jose Manuel Dieguez-Campo

Hienminh Huu Le

Jun Li

Fei Peng

Xi Huang

Kiran Krishnapur

Surendra Kanimihally Setty

Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

High-K dielectric materials comprising zirconium oxide utilized in display devices

Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

Hybrid high-K dielectric material film stacks comprising zirconium oxide utilized in display devices

Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

Methods for HMDSO thermal stability

Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.

Substrate support for chucking of mask for deposition processes

Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

A mask assembly () includes a mask frame () and a mask screen (), both of the mask frame () and the mask screen () made of a metallic material, and a metal coating () disposed on exposed surfaces of one or both of the mask frame () and the mask screen ().

Shadow mask with plasma resistant coating

High-k dielectric materials comprising zirconium oxide utilized in display devices

Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure with desired profile control of the TFE structure. In one example, a method for forming a thin film encapsulation structure over an OLED structure includes forming a thin film encapsulation structure over an OLED structure disposed on a substrate, and performing a plasma treatment process to the thin film encapsulation structure by supplying a treatment gas mixture including a halogen containing gas to the thin film encapsulation structure.

Encapsulating film stacks for OLED applications with desired profile control

Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, an OLED device includes a first barrier layer disposed on a region of a substrate having an OLED structure disposed thereon, a fluorinated buffer layer including a polymer material containing fluorine disposed on the first barrier layer, an interface layer including the polymer material on the fluorinated buffer layer, and a second barrier layer disposed on the interface layer.

Fluorine-containing polymerized HMDSO applications for OLED thin film encapsulation

Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer.

Fluorine-containing plasma polymerized HMDSO for OLED thin film encapsulation

Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

Encapsulating film stacks for OLED applications

Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

Showerhead support structure for improved gas flow

Growing community of inventors

Campbell, CA, United States of America

Jrjyan Jerry Chen