Taiwan Semiconductor Manufacturing Comp. Ltd.

Jr-Yu Chen

Tze-Liang Lee

Tai-Chun Huang

Yi-Wei Chiu

Chung-Ting Ko

Jr-Hung Li

Han-Ti Hsiaw

Shin-Yeu Tsai

Po-Hsien Cheng

Kuan-Cheng Wang

Chih-Hung Sun

Wan-Chen Hsieh

Wen-Cheng Wu

Ching-Yu Chang

Jung-Hau Shiu

Jei Ming Chen

A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Semiconductor device, FinFET device and methods of forming the same

In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

Methods of determining process recipes and forming a semiconductor device

A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.

Contact openings and methods forming same

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Taipei, Taiwan

Jr-Yu Chen