Macronix International Co., Ltd.

Jr-Meng Wang

Kuang-Wen Liu

Chun-Min Cheng

Cheng-Wei Lin

Jung-Yi Guo

Chih-Yuan Wu

Kuanf-Wen Liu

A semiconductor device includes a substrate, a stacked structure disposed on the substrate, and dummy memory string structures. The stacked structure includes alternately stacked insulating layers and conductive layers. The dummy memory string structures disposed in a staircase region of the semiconductor device penetrate the stacked structure along a first direction. The staircase region includes a body portion including a first region and a second region adjacent to the first region. In the first region, an amount of conductive layers corresponding to the dummy memory string structures is between 1 and 10; in the second region, an amount of conductive layers corresponding to the dummy memory string structures is greater than 10. An area of the dummy memory string structures in the first region is greater than an area of the dummy memory string structures in the second area under an identical unit area in a top view.

Semiconductor device and method for fabricating the same

Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. The methods may include two or more nitride removal steps during formation of gate layers in vertical memory cells. The two or more nitride removal steps may allow for wider gate layers increasing the gate fill-in, reducing the occurrence of voids, and thereby improving the word line resistance.

Methods of manufacturing semiconductor devices with improved metal gate fill-in for vertical memory cell and devices thereof

Growing community of inventors

Hsinchu County, Taiwan

Jr-Meng Wang