Avanex Corporation

Alcatel

Joël Jacquet

Xavier Andrieu

Alain Pastouret

Franck Mallecot

Antonina Plais

Arnaud Leroy

Christine Chaumont

Didier Decoster

Sylvic Barusseau

Joe Harari

A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Multi section electrooptic monolithic component

The present invention relates to an optical device comprising an ionic conductor and a pair of electrodes, the ionic conductor being made of a material that is transparent to light and contains mobile ions and the electrodes being suitable for absorbing and desorbing the ions and being in ionic contact with the ionic conductor. The refractive index in at least a zone of the ionic conductor can be varied under the effect of the voltage applied between the electrodes. The electrodes contain an electrochemically active material selected from an active carbon, a conductive polymer, and an insertion material suitable for inserting ions in its structure.

Optical device of variable refractive index

The invention concerns a tunable edge-emitting semiconductor laser () including a resonant cavity delimited by two reflectors (), one of which is a fixed reflector () and the other of which is a mobile reflector (), and including an active section () with gain of length Land a tunable section () of length L, characterized in that the total length of the cavity L=L+Lis less than or equal to 20 &#x3bc;m.

Edge-emitting semiconductor tunable laser

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Limours, France

Joël Jacquet