Koninklijke Philips Corporation N.v.

Nxp B.v.

Jozeph Peter Karl Hoefsmit

Einte Holwerda

Klaastinus Hendrikus Sanders

Gerrit Willem Jan Ter Horst

Pieter Weyert Lukey

Nicolaus Antonius Maria Koper

Klaas Van Der Vlist

The invention relates to a semiconductor device () comprising an electrically conductive bottom plate () on an upper side of which a semiconductor element () is positioned with a first connection region and a second connection region and with a first conductor and a second conductor, part of which is connected to, respectively, the first and the second connection region of the semiconductor element (), the semiconductor element () and the parts of the conductors connected to the semiconductor element () being provided with an electrically insulating resin encapsulation () that covers a side face of the bottom plate (), and the side face of the bottom plate () being provided, at the bottom face of the bottom plate (), with a cavity () which is filled with a part of the encapsulation (). According to the invention, the cavity (), viewed in a direction transverse and perpendicular to the edge of the bottom plate (), has the form of a staircase with to steps. In this way it is achieved that during the formation of the encapsulation (), which at this stage is still liquid, said encapsulation () overflows a part of the bottom face of the bottom plate (). Thus, the resulting device () can be mounted flat and with excellent heat sink capability of the bottom plate (). Preferably, the semiconductor device () comprises a discrete power device such as a (LD)MOSFET. The invention further comprises a cheap and easy way of manufacturing a device according to the invention.

Semiconductor device and method of manufacturing thereof

The invention relates to a semiconductor device with a diode. The semiconductor body ( ) comprises a stack of a first semiconductor region provided with a first connection conductor ( ) and a second semiconductor region ( ) connected to a second connection conductor ( ), wherein a rectifying junction is present between the two semiconductor regions ( ) having opposite conductivity types. Such a device is&mdash;after a rotation through 90 degrees&mdash;suitable for surface mounting. However, in particular at high voltage and/or high power levels, the diode may suffer from breakdown or a high leakage current. In a device according to the invention, a portion ( A) of the first semiconductor region ( ) is electrically insulated from the rest ( B) of the first semiconductor region ( ), the semiconductor body ( ) is provided with means ( ) by which said portion ( A) is connected with electrical conduction to the second semiconductor region ( ), and the second connection conductor ( ) is situated on said portion ( A) of the first semiconductor region ( ). The resulting device is directly suitable for surface mounting, i.e. without the need of rotation, and is much less prone to breakdown or high leakage currents, even in high-voltage and/or high-power applications. The portions ( A, B) may be easily separated by a groove ( ). The means ( ) may be a conductive channel created in a simple manner by means of a current pulse through the rectifying junction. Manufacture of the device is both simple and inexpensive.

Semiconductor device with a diode, and method of manufacturing such a device

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Stadskanaal, Netherlands

Jozeph Peter Karl Hoefsmit