Imec Vzw

Interuniversitair Microelektronica Centrum (imec)

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Interuniversitair Micro-elektronica Centrum Vzw

Sol IP S.a.r.l.

Interuniversifair Micro-elektronica Cenirum (imec Vzw)

Jozef Szlufcik

Johan F Nijs

J&ouml;rg Horzel

Emmanuel Van Kerschaver

Mia Honor&eacute;

Tom Borgers

Christophe Allebé

Roland Jozef Fick

Roland Einhaus

Jorg Horzel

A uniform layer of insulating material is used to separate the connectors from the non-illuminated side of a back-contact solar cell, particularly a cell of the MWT type, the layer preferably being a uniform woven or non-woven fabric of a heat-resistant material such as glass fiber, and the electrical connection between the contact points of the cell and the connectors being made through the uniform layer thereby partially embedding the insulating material in the connection.

Use of a uniform layer of insulating material in back-contact solar cells

A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.

Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates

The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate; step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, the dopant from said solids-based dopant source diffusing directly into said substrate to form a first diffusion region and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate to form a second diffusion region in at least some areas of said substrate to form a second diffusion region in at least some areas of said substrate not covered by said pattern; and step 3) forming a metal contact pattern substantially in alignment with said first diffusion region without having etched said second diffusion region substantially.

Semiconductor device with selectively diffused regions

The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate ( ) in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate ( ); step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate ( ) by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate ( ), the dopant from said solids-based dopant source diffusing directly into said substrate ( ) to form a first diffusion region ( ) and, at the time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate ( ) to form a second diffusion region ( ) in at least some areas of said substrate ( ) not covered by said pattern; and step 3) forming a metal contact pattern ( ) substantially in alignment with said first diffusion region ( ) without having etched said second diffusion region ( ) substantially.

The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least a first part located adjacent to the front surface and a second part located adjacent to the second surface. The front surface includes conductive contacts to the second region and the second surface has separated contacts to the first region and to the second region. The contacts to the second region at the second surface are connected to the contacts at the front surface through a limited number of vias.

Solar cell and process of manufacturing the same

An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl,and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.

Furnace for continuous, high throughput diffusion processes from various diffusion sources

An open apparatus is described for the processing of planar thin semiconductor substrates, particularly for the processing of solar cells. The apparatus includes a first zone for the drying and burn-out of organic components from solid or liquid based dopant sources pre-applied to the substrates. The zone is isolated from the remaining zones of the apparatus by an isolating section to prevent cross-contamination between burn-out zone and the remaining processing zones. All the zones of the apparatus may be formed from a quartz tube around which heaters are placed for raising the temperature inside the quartz tube. Each zone may be purged with a suitable mixture of gases, e.g. inert gases such as argon, as well as oxygen and nitrogen. The zones may also be provided with gaseous dopants such as POCl.sub.3 and the present invention includes the sequential diffusion of more than one dopant into the substrates. Some of the zones may be used for driving-in the dopants alternatively, for other processes, e.g. oxidation. The present invention also includes a method of operating the apparatus and the use of the apparatus in processing solar cells.

Furnace for continuous, high throughput diffusion processes from various

Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the following steps:

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Kessel-lo, Belgium

Jozef Szlufcik