Asml Netherlands B.v.

Carl Zeiss Smt Gmbh

Asml Holding N.v.

Asml Holdings N.v.

Jozef Petrus Henricus Benschop

Marinus Aart Van Den Brink

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Johannes Catharinus Hubertus Mulkens

Arno Jan Bleeker

Arie Jeffrey Den Boef

Pieter Willem Herman De Jager

Harry Sewell

Heiko Feldmann

Cheng-Qun Gui

Johannes Onvlee

Coen Adrianus Verschuren

Pieter-Jan Van Zwol

Mária Péter

Erwin John Van Zwet

Ralph Brinkhof

Willem Joan Van Der Zande

Luigi Scaccabarozzi

Erwin Paul Smakman

Lukasz Jerzy Macht

Tamara Druzhinina

Bernardo Kastrup

Valentin Bolsinger

Florian Didier Albin Dhalluin

William Peter Van Drent

Hans Butler

Nicolaas Ten Kate

Martinus Hendrikus Antonius Leenders

Johannes Hubertus Josephina Moors

Nicolaas Rudolf Kemper

Raymond Wilhelmus Louis Lafarre

Frits Van Der Meulen

Harmen Klaas Van Der Schoot

Andrei Mikhailovich Yakunin

Andrey Alexandrovich Nikipelov

Antonius Johannes Josephus Van Dijsseldonk

Niek Jacobus Johannes Roset

Willem Jurrianus Venema

Felix Godfried Peter Peeters

Michael Jozef Mathijs Renkens

Arjen Boogaard

Alexander Viktorovych Padiy

Gerardus Adrianus Antonius Maria Kusters

Jeroen Dekkers

Hrishikesh Patel

Alexey Sergeevich Kuznetsov

Gregor Edward Van Baars

Tao Chen

Laurent Khuat Duy

Alexander Nikolov Zdravkov

Michael Jozefa Mathijs Renkens

Sander Van Opstal

Dimitra Sarri

Bartholomeus Hendricus Koek

Oscar Fransiscus Jozephus Noordman

Mária PÉTER

Marinus Aaert Van Den Brink

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Method and apparatus for inspection

An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength &#x3bb;. A second of the diffraction structure groups is configured to suppress a second target wavelength &#x3bb;, where (&#x3bb;&#x2212;&#x3bb;)/(&#x3bb;+&#x3bb;)&#x3c;20%. A topography of the diffraction structure levels can be described as a superimposition of two binary diffraction structure groups. Boundary regions between adjacent surface sections of each of the binary diffraction structure groups have a linear course and are superimposed on one another at most along sections of the linear course.

Optical diffraction component for suppressing at least one target wavelength by destructive interference

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane has one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10cm, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are within some or all of the additional layers.

Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane

The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.

Dual stage lithographic apparatus and device manufacturing method

A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10cm, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.

In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Lithographic apparatus, programmable patterning device and lithographic method

A radiation spot measurement system for a lithographic apparatus, the system having a target onto which a radiation system of the lithographic apparatus may project spots of radiation for a measurement process, the target having a measurement target. The system further includes a radiation detector to detect radiation from one of the spots, and a controller to receive information from the radiation detector and to determine the position of the spot of radiation relative to an intended position of the spot of radiation.

Measurement of the position of a radiation beam spot in lithography

A cover is provided for a substrate table in an immersion lithographic apparatus that covers at least the gap between a substrate and a recess in a substrate table in which the substrate is received.

Substrate table for a lithographic apparatus, lithographic apparatus, method of using a substrate table and device manufacturing method

In a solid immersion lithography apparatus, the final element of the projection system is maintained at a distance of less than about 50 nm from the substrate by an actuator system. The final element may be formed as two parts, with a fluid, e.g. a liquid, confined between them. The actuator system may be controlled relative to a reference frame, which may be supported by a bearing. Backscatter detection can be used to determine if the distance between the final element and the substrate is too large. A cleaning device can clean the substrate between exposures.

Lithographic apparatus and device manufacturing method

A level sensor arrangement is useable for measuring a height of a surface of a substrate in a lithographic apparatus. The level sensor arrangement is provided with a light source emitting detection radiation towards the substrate, and a detector unit for measuring radiation reflected from the substrate in operation. The light source is arranged to emit detection radiation in a wavelength range in which a resist to be used for processing the substrate in the lithographic apparatus is sensitive.

Level sensor arrangement for lithographic apparatus and device manufacturing method

A level sensor for measuring a position of a surface of a substrate includes a projection unit including an emitter for emitting a radiation beam towards the substrate and a projection grating including a measurement grating and an aperture, such that the radiation beam incident on the projection grating is divided into a measurement radiation beam and a capture radiation beam. The level sensor further includes a detection unit including a first and second measurement detector, a first and second capture detector, a detection grating, and a first and second optical unit. The detection grating includes a ruled grating with multiple rules, which direct radiation towards the first and second measurement detector via the first and second optical unit, and a capture element directing radiation towards the first and second capture detector via the first and second optical unit.

Level sensor, lithographic apparatus, and substrate surface positioning method

Growing community of inventors

Veldhoven, Netherlands

Jozef Petrus Henricus Benschop