Tokyo Electron Limited

Other

Tokyo Electron Limi Ted

Jozef Brcka

Rodney Lee Robison

John Stephen Drewery

Mirko Vukovic

Glyn J Reynolds

Michael James Grapperhaus

Tugrul Yasar

Bruce David Gittleman

Gerrit J Leusink

Jacques Faguet

Frank M Cerio, Jr

Takashi Horiuchi

Derrek Andrew Russell

Toshio Nakanishi

Peter L G Ventzek

Minoru Honda

Hongyu Henry Yue

Eric M Lee

Gert J Leusink

Masayuki Kohno

Song Yun Kang

Osayuki Akiyama

Frank Cerio

Bill Jones

Jeffrey J Long

Bill Oliver

Charles Tweed

Bruce David Gittelman

Frank Michael Cerio

Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.

Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source

Embodiments of systems and methods for a poly-phased inductively coupled plasma source are described. In an embodiment, a system may include a metal source configured to supply a metal for ionized physical vapor deposition on a substrate in a process chamber. The system may also include a high-density plasma source configured to generate a dense plasma, the high-density plasma source comprising a plurality of inductively coupled antennas. Additionally, the system may include a substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma. In such embodiments, each antenna is configured to receive power at a phase orientation determined according to a phase arrangement.

Poly-phased inductively coupled plasma source

One or more electrodes are attached to an electrically permeable substrate attached to an incubator and energized with A.C. signals, D.C. signals or both A.C. and D.C signals. E-fields emitted from the electrodes pass through the substrate and into the incubator. The e-fields generate or apply dielectrophoresis (DEP) forces on small particles suspended in a liquid inside the incubator. The strength and direction of the DEP forces are controlled and manipulated by the manipulating the signals and can manipulate the motion of the suspended particles. The shapes of the electrodes help shape the generated e-fields and facilitate complex movements of the suspended particles. The suspended particles can be stem cells in a nutrient rich solution.

Methods and systems for dielectrophoresis (DEP) separation

A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.

Method of cleaning the filament and reactor's interior in FACVD

A method and apparatus are provided for constructing tissue from cells or other objects by application of temporally and spatially controlled electric fields. Electric field applicators expose a substrate () to the electric field controlled to affect the processing medium () to achieve a processing effect on the construction of tissue on the substrate (). Electrical bias is selected to interact with dipole properties of the medium () to control the movement of suspended dielectrophoretic cells or other particles in the medium () or at the substrate (). The motion of suspended particles may be affected to cause suspended particles of different properties to follow different paths in the processing medium (), which may be used to cause the suspended particles to be sorted. The processing medium () and electrical bias may be selected to affect the structure, or orientation, of one or more layers on the substrate ().

System and method for tissue construction using an electric field applicator

A processing method and apparatus uses at least one electric field applicator () biased to produce a spatial-temporal electric field to affect a processing medium (), suspended nano-objects () or the substrate () in processing, interacting with the dipole properties of the medium () or particles to construct structure on the substrate (). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate () or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (). Depositing or modifying a layer on the substrate () may be carried out. Further, the processing medium () and electrical bias may be selected to prepare at least one layer on the substrate () for bonding the substrate () to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

Method and device for controlling pattern and structure formation by an electric field

A treatment system is described for exposing a substrate to various processes. Additionally, a gas distribution system is configured to be coupled to and utilized with the treatment system in order to distribute process material above the substrate is provided. The treatment system includes a process chamber, a radical generation system coupled to the process chamber, a gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a temperature controlled pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Multi-zone gas distribution system for a treatment system

Different gases are separately exposed to RF energy in different zones in inlets to a processing chamber. Plasma is activated in the gases in each of the zones separately and the activated gases are then introduced into the plasma processing chamber where they may undergo mutual interaction within a processing zone. Control of the active species distribution within the processing chamber is provided by control of the energizing of the gases in the separate inlet zones before they are combined in the processing zone. An ICP source energizes gas in each zone through an antenna having one or more conductors, each of which is coupled to a plurality of the zones. This allows gases to be brought together in their active states, rather than being combined and then activated, and allows the same or different parameters to be applied in different inlet zones.

Multiple gas plasma forming method and ICP source

A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects.

Control of ion angular distribution function at wafer surface

The invention relates to the simulation method and apparatus used in plasma modeling. It includes a method to transform transient formulations of the phenomenological plasma model into a quasi-stochastic spatial formulation. Specifically, the invention aids in decreasing computational time for the modeling of plasma in a plasma processing system, particularly those involving two different time-based parameters. The invention is particularly described in connection with plasma simulations used for the optimization dual-frequency capacitively-coupled plasma etching systems.

Plasma fluid modeling with transient to stochastic transformation

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 10cm, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process

An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in lengths of closely-spaced windings of a single conductor to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, and alternating distributed conductor segments through which current flows in lengths of more widely-spaced windings of the conductor to produce weaker magnetic fields aligned with more opaque shield sections that couple less energy to the plasma.

Plasma processing system with locally-efficient inductive plasma coupling

Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

Embedded multi-inductive large area plasma source

An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna for the source is a planer coil having at least two windings with the gap between the windings variable or modulated to control the antenna inductance around the antenna. The antenna has a plurality of, for example three, high inductance segments as a result of the conductor windings being closely spaced alternating with low inductance segments as a result of the conductor windings being widely spaced. The antenna and a shield are part of a plasma source. The shield has a plurality of high transparency segments aligning with the high inductance segments of the antenna. The shield may also have one or more additional high transparency segments along the low inductance portions of the antenna enhance formation of a plasma ring in the chamber.

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Loundonville, NY, United States of America

Jozef Brcka