The Governing Council of the University of Toronto

Finisar Corporation

Ii-vi Delaware, Inc.

Rockley Photonics Limited

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Joyce Kai See Poon

Zheng Yong

Bryan Park

Daniel Mahgerefteh

Wesley David Sacher

Hooman Abediasl

Amit Singh Nagra

Guomin Yu

Pradeep Srinivasan

Sylvie Menezo

Haydn Frederick Jones

Damiana Lerose

Jared Mikkelsen

Torrey Lane Thiessen

Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height hfrom a bottom of the rib to a top of the ridge, a rib height hfrom the bottom of the rib to a top of the rib, a rib width w, and a top width wof the ridge. The rib width wvaries along at least a portion of a length of the SiN rib waveguide core.

Adiabatic polarization rotator-splitter

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.

Optical modulators

A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

Adiabatic polarization rotator combiner

A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species. In a third implantation step, the second dopant species is implanted over the second portion of the Si structure including the second edge of the Si structure opposed to the first edge but excluding the first edge, such that the second dopant species is implanted above the first dopant species.

System and method for manufacturing a semiconductor junction

A photonic device comprising: a support; an intermediate layer comprising at least one dielectric material and a first and second excess thickness of silicon separated from each other by a space; a first patterned silicon layer at least partially forming a waveguide, and first to fifth waveguide sections; a first dielectric layer covering the first silicon layer and a gain structure comprising at least one gain medium in contact with the first dielectric layer; the second and fourth wave guide sections, the first and second excess thicknesses of silicon, and the first and second ends of the gain structure forming a first and second optical transition zone between a hybrid laser waveguide, formed by a central portion of the gain structure, the space and the third waveguide section and the first and fifth waveguide sections respectively. The invention also relates to a method of fabricating such a photonic device.

Photonic device comprising a laser optically connected to a silicon wave guide and method of fabricating such a photonic device

In an example, a system includes a grating coupled laser and a photonic integrated circuit. The grating coupled laser includes a first waveguide and a transmit grating coupler optically coupled to the first waveguide. The photonic integrated circuit includes a second waveguide and a receive grating coupler optically coupled to the second waveguide. The second grating coupler may include a negative angle grating coupler.

Negative angle grating coupler

An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage.

A silicon photonic platform includes a substrate supporting a buried oxide layer, an active silicon layer deposited on the buried oxide layer, a first silicon nitride layer separated from the active silicon layer by a first spacer, the first silicon nitride layer and the active silicon layer constituting a first light-transferring interlayer transition and a second silicon nitride layer covered by a cladding and separated from the first silicon layer by a second spacer, the second silicon nitride layer and the first silicon nitride layer constituting a second light-transferring interlayer transition. The second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing. The silicon nitride layers may be substituted with an equivalent dielectric with a similar refractive index and high optical transparency in the desired operating wavelength range.

Photonic platform having light-transferring interlayer transitions

There is provided an output coupler modulated laser. The laser includes an optical resonator for light to circulate within, a gain medium housed within the optical resonator and a pump. An output coupler included in the optical resonator is responsive to a control signal to generate a modulated optical signal at a laser output port, and a complementary signal at a through port to retain circulating light within the optical resonator. The output coupler and the pump are jointly controllable to maintain the power level of the circulating light substantially at a selected, steady state level, and to decouple the modulation response of the laser from the intrinsic response of the circulating light due to interaction with the gain medium. The output coupler is configurable for simple amplitude modulation, Phase-Shift Keying (PSK), Quadrature Amplitude Modulation (QAM), and is suitable for use with high-finesse, micron or millimeter scale resonators.

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Toronto, Canada

Joyce Kai See Poon