National Science Council

National Cheng-kung University

Jow-Lay Huang

Jih-Jen Wu

Wei-Ting Wu

Jen-Sue Chen

Min-Da Hsieh

Wen-Pin Liao

Ming-Tung Lee

Jiunn-Jye Huang

Kuo-Chi Twu

A photovoltachromic device includes a photoelectrode, a counter electrode electrically connected to the photoelectrode, and an electrolyte layer disposed between the photoelectrode and the counter electrode. The photoelectrode includes a first transparent electrode, an electron-transport layer disposed on the first transparent electrode, and a sensitizing layer disposed on the electron-transport layer. The counter electrode includes a second transparent electrode and an electrochromic layer disposed on the second transparent electrode. The second transparent electrode contacts both of the electrolyte layer and the electrochromic layer thereby accelerating the response times for coloring and bleaching the photovoltachromic device.

Photovoltachromic device and the application thereof

The purpose of this invention is to manufacture complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components efficiently with effective cost. Chromium carbide, which is quite chemically inert at elevated temperature, is added into an alumina matrix for toughening purposes. Chromium carbide and alumina ceramic powders are mixed with binders to form a solidified suspension. The suspension is then crushed, heated, and injected into green products. Controlled solvent and thermal debinding processes are followed before performing pressureless sintering. Samples are sintered in pre-treated argon gas with minimum oxygen partial pressure, or in vacuum for controlling the phase stability and microstructure for tailoring mechanical properties. The processing parameters for injection molding, the composition design of binders and ceramic composites, and the techniques for controlling the phase transformation of chromium carbide are developed. A near-net shape complex component with minimum after machining can be manufactured. The injection molding and pressureless sintering process make the mass production possible. Optimized properties of 97.8% in the theoretical density, 500 Mpa in strength, and 5.85 MPam.sup.1/2, are obtained. These properties are greater, in comparison, than the properties of conventional alumina ceramics.

Manufacture of complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3

A tube chemical vapor deposition method of preparing titanium carbide/silicon nitride (TiC/Si.sub.3 N.sub.4) composites. To prepare such composites, titanium carbide (TiC) is first coated with a homogeneous layer of titanium nitride (Ti.sub.3 N.sub.4). A gas mixture of titanium chloride (TiCl.sub.4), nitrogen (N.sub.2), hydrogen (H.sub.2) with an appropriate ratio is introduced into a reaction chamber where the tube chemical vapor deposition takes place. The temperature of the reaction for the sintering process is between 900.degree. C. to 1200.degree. C., under a total pressure of 1 atm. While maintaining a constant temperature for 1 to 2 hours, deposition of titanium nitride (Ti.sub.3 N.sub.4) onto titanium carbide (TiC) powder takes place. The adoption of the simple tube chemical vapor deposition technique for the present invention not only enables a mass production of homogeneously coated titanium carbide (TiC) particulates, but also further enhances the hardness and toughness as well as other mechanical properties of silicon based composites, such as a titanium carbide/silicon nitride (TiC/Si.sub.3 N.sub.4) composite.

Tube chemical gas deposition method of preparing titanium nitride coated

Growing community of inventors

Tainan, Taiwan

Jow-Lay Huang