Chartered Semiconductor Manufacturing Ltd (corporation)

Globalfoundries Singapore Pte. Ltd.

Jovin Lim

Nace Layadi

Alvaro Maury

Ranbir Singh

Nace Rossi

Peter Chew

Chuin Boon Yeap

Hoon Lian Yap

Sebastian Ouek

Sebastian Quek

Chih Ping Yong

A integrated circuit system including providing an integrated circuit device, forming an undoped insulating layer over the integrated circuit device, forming a thin insulating layer over the undoped insulating layer, forming a doped insulating layer over the thin insulating layer, and forming a contact in the undoped insulating layer, thin insulating layer and the doped insulating layer.

Integrated circuit system with contact distribution film

A slurry dispensing apparatus for use with a chemical mechanical polishing tool for planarizing semiconductor substrates having irregular topology. The apparatus includes a slurry dispensing manifold with a first end suspended over a polishing pad, and a second end for mounting to the chemical mechanical polishing tool. The slurry dispensing manifold has a linear array of nozzles positioned under the suspended manifold. Each nozzle provides an adjusted slurry mixture that is supplied from bifurcated supply lines. A first branch supplying a slurry, and a second branch supplying deionized water. Each nozzle is capable of providing a particular slurry concentration to either decrease or to increase polishing rate in specific zonal areas on a substrate according to its surface topology.

Zone polishing using variable slurry solid content

A new method is provided for the creation of an adhesion/barrier layer over which a tungsten interconnect is created. The invention reduces metal extrusion and effects of pin-holes by dividing the process of barrier material of TiN deposition into phases, whereby after about half the thickness of the required layer of TiN has been deposited, an intermediate and very thin layer of Ti is deposited. After the thin layer of Ti has been deposited, the deposition of the barrier layer of TiN is continued to the point where the required thickness for the layer of TiN has been reached.

IMP TiN barrier metal process

Growing community of inventors

Singapore, Singapore

Jovin Lim