Nxp B.v.

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven Research & Development

Josine Loo

Youri Victorovitch Ponomarev

Roeland Huys

Carmen Bartic

The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle () on a substrate (), each of the microneedles () comprising at least one channel () surrounded by an insulating layer (). The present invention also provides a method for making such an electronic device for sensing and/or actuating.

CMOS compatible microneedle structures

The invention relates to a semiconductor device () having a semiconductor body (), comprising a field effect transistor, a first gate dielectric (A) being formed on a first surface at the location of the channel region () and on it a first gate electrode (), a sunken ion implantation () being executed from the first side of the semiconductor body () through and on both sides of the first gate electrode (), which implantation results in a change of property of the silicon below the first gate electrode () compared to the silicon on both sides of the gate electrode) in a section of the channel region () remote from the first gate dielectric (A), and on the second surface of the semiconductor body () a cavity () being provided therein by means of selective etching while use is made of the change of property of the silicon. A second gate (B,) is deposited in the cavity thus formed. Before the ion implantation (), a mask (M) is formed on both sides of the gate electrode () and at a distance thereof, whereby after the ion implantation () at the location of the mask (M) also a change in property of the silicon is obtained. In this way the device () can be easily provided with lateral insulation regions. Also the end regions of the gate electrodes () can in this way be surrounded by insulation regions.

Method for the manufacture of a semiconductor device and a semiconductor device obtained through it

A method of fabricating a dual-gate semiconductor device is provided in which silicidation of the source and drain contact regions () is carried out after the first gate () is formed on part of a first surface () of a silicon body () but before forming a second gate () on a second surface () of the silicon body which is opposite the first surface. The first gate () serves as a mask to ensure that the silicided source and drain contact regions are aligned with the silicon channel (). Moreover, by carrying out the silicidation at an early stage in the fabrication, the choice of material for the second gate is not limited by any high-temperature processes. Advantageously, the difference in material properties at the second surface of the silicon body resulting from silicidation enables the second gate to be aligned laterally between the silicide source and drain contact regions.

Growing community of inventors

Leuven, Belgium

Josine Loo