Micron Technology Incorporated

Josiah Jebaraj Johnley Muthuraj

Kevin Lee Baker

Efe Sinan Ege

Rajasekhar Venigalla

Sri Sai Sivakumar Vegunta

Patrick M Flynn

Tao D Nguyen

Jukuan Zheng

Davis Weymann

Janos Fucsko

Farrell Martin Good

Jerome A Imonigie

Santanu Sarkar

Kent H Zhuang

Benjamin E Greenwood

Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Low resistance crosspoint architecture

Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Methods for forming memory devices, and associated devices and systems

Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.

Semiconductor structure formation

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Meridian, ID, United States of America

Josiah Jebaraj Johnley Muthuraj