United States of America As Represented by the Secretary of the Air Force

USA As Represented by Secretary of the Navy

Joshua R Hendrickson

Shivashankar Vangala

Justin W Cleary

Ricky D Gibson, Jr

Berend T Jonker

Jarrett H Vella

Ivan Avrutsky

Evan Smith

Matthew R Rosenberger

Hsun-Jen Chuang

Chandriker Kavir Dass

A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

Nano-indent process for creating single photon emitters in a two-dimensional materials platform

A transmission filter apparatus is provided that includes: (i) a substrate to serve as a foundation for the apparatus; (ii) a layer containing resonant dielectric cavities separated by conductive regions. The dimensions and design of the dielectric cavities, thickness of the layer, and substrate, dielectric and conductive materials are chosen to achieve resonant transmission of selected wavelengths. In a particular one or more embodiments, the layer is one dimensional, i.e. you have dielectric cavities along one axis in the plane that are comparatively infinity long in the parallel plane. In a particular one or more embodiments, the layer is two dimensional, i.e. you have dielectric cavities along both axis in the plane. The dimensions in each plane may or may not be equal. In a specific one or more embodiments, the dielectric cavities are terminated on the top and/or bottom by thin metal films with small apertures or tapers.

Angle- and polarization-insensitive narrow-band optical filters using resonant cavities

An LED structure is formed in a nanobeam on a semiconductor base and includes three nanobeam sections. A central section is the LED and it is formed by a bottom germanium doped layer, a middle germanium-tin layer and a top germanium layer that is doped oppositely from the bottom germanium layer. Left and right germanium nanobeam sections extend outwardly from the left and right ends of the central section. Metal contacts are formed on the top and bottom layers and an electrical circuit is connected to the metal contacts and provides an electrical signal that energizes the middle section and causes it to emit light, some of which is transmitted by the left and right nanobeams. Cylindrical holes are formed in the nanobeam and are sized and spaced apart to form a zero point-defect resonator. The diameters of the holes are reduced as they move further away from the central section in accordance with a Gaussian taper. The LED is configured and dimensioned to have a maximum modulation rate from about 1.6 GHz to about 0.4 GHz. The bottom layer is configured such that the metal contact on the bottom layer is spaced away from the middle layer to thereby reduce metal damping of the LED.

GeSn nanobeam light-emitting diode

An optical switch includes a first Mach-Zehnder waveguide interferometer; a second Mach-Zehnder waveguide interferometer substantially parallel to the first Mach-Zehnder waveguide interferometer; and a pair of directional couplers, wherein each directional coupler is connected at each end of the first Mach-Zehnder waveguide interferometer and the second Mach-Zehnder waveguide interferometer, wherein each of the first Mach-Zehnder waveguide interferometer and the second Mach-Zehnder waveguide interferometer include a pair of coupled resonator optical waveguides sequentially aligned to one another and each including a semiconductor substrate; a silicon layer above the semiconductor substrate; an elongated photonic crystal structure on the silicon layer to propagate an electromagnetic signal therethrough; a plurality of holes in the elongated photonic crystal structure; and a pair of electrical contacts in the silicon layer and positioned adjacent to the elongated photonic crystal structure.

Optical switch

A hybrid plasmonic-pyroelectric detector and laser detection system is disclosed. The hybrid plasmonic-pyroelectric detector includes a substrate and a refractory ground plane mounted on a surface of the substrate. A plasmonic array defines a plurality of apertures formed in the array. A highly-oriented pyroelectric layer is mounted on a surface of the ground plane and a surface of the plasmonic array. The plasmonic array is constructed and arranged to select particular wavelengths. Alternatively, a semiconductor or an avalanche material may be used. A pair of electrode contacts are coupled to each of the plasmonic array and the refractory ground plane. A laser detection system in accordance with the disclosure includes a mechanical chopper, a lens, a folding mirror, and a chip carrier for mounting the hybrid plasmonic-pyroelectric detector.

Growing community of inventors

Dayton, OH, United States of America

Joshua R Hendrickson