Samsung Electronics Co., Ltd.

Joshua Mark Rubin

Sandip Tiwari

Choong-Man Lee

Moon-Kyung Kim

Soo-Doo Chae

Ravishankar Sundararaman

An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.

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Ithaca, NY, United States of America

Joshua Mark Rubin