Applied Materials, Inc.

Joshua Maher

Deenesh Padhi

Xinhai Han

Wenjiao Wang

Tza-Jing Gung

Nagarajan Rajagopalan

Sidharth Bhatia

Zhaozhao Zhu

Hang Yu

Patrick John Tae

Masaki Ogata

Kristopher R Enslow

Chuan Ying Wang

Alok Jain

Chuanxi Yang

Varoujan Chakarian

Jeffrey Yat Shan Au

Kesong Hu

SeoYoung Lee

Phaik Lynn Leong

Grace Qi En Teong

A method includes receiving, by a processing device, first sensor data indicating a state of a wall corresponding to a first processing chamber. The first sensor data includes optical spectral data. The method further includes determining, by the processing device, a first value based on the first sensor data. The first value corresponds to a first amount of a product disposed along a surface of the wall at a first time. The method further includes determining, by the processing device, a first update to a first process operation associated with the first processing chamber based on the first value. The method further includes performing, by the processing device, one or more of (i) preparing a notification indicating the first update for presentation on a graphical user interface (GUI), or (ii) causing performance of the first process operation in accordance with the first update.

Process characterization and correction using optical wall process sensor (OWPS)

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Modified stacks for 3D NAND

Methods and systems are described for generating assessment maps. A method includes receiving a first vector map comprising a first set of vectors each indicating a distortion of a particular location on a substrate and generating a second vector map indicating a change in direction of a magnitude of the distortion of the particular location on the substrate. The method further includes generating a third vector map comprising vectors reflecting reduced noise in distortions across the plurality of locations on the substrate and generating a fourth vector map projecting a direction component of each vector component in the third set of vectors to a radial direction. The method further includes generating a fifth vector map by grouping the vectors of the fourth set of vectors and determining a magnitude associated with each group of vectors.

Analyzing in-plane distortion

Methods, systems, and non-transitory computer readable medium are described for generating assessment maps for corrective action. A method includes receiving a first vector map including a first set of vectors each indicating a distortion of a particular location of a plurality of locations on a substrate. The method further includes generating a second vector map including a second set of vectors by rotating a position of each vector in the first set of vectors. The method further includes generating a third vector map including a third set of vectors based on vectors in the second set of vectors and corresponding vectors in the first set of vectors. The method further includes generating a fourth vector map by subtracting each vector of the third set of vectors from a corresponding vector in the first set of vectors. The fourth vector map indicates a planar component of the first vector map.

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Sunnyvale, CA, United States of America

Joshua Maher