Intel Corporation

Joshua M Howard

Ian A Young

Uygar E Avci

Seiyon Kim

Daniel Henry Morris

Described is an apparatus which comprises: a first layer comprising a semiconductor; a second layer comprising an insulating material, the second layer adjacent to the first layer; a third layer comprising a high-k insulating material, the third layer adjacent to the second layer; a fourth layer comprising a ferroelectric material, the fourth layer adjacent to the third layer; and a fifth layer comprising a high-k insulating material, the fifth layer adjacent to the fourth layer.

Multilayer insulator stack for ferroelectric transistor and capacitor

Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.

Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure

Memory field-effect transistors and methods of manufacturing the same are disclosed. An example apparatus includes a semiconductor substrate and a ferroelectric gate insulator of a memory field-effect transistor formed within a trench having walls defined by spacers and a base defined by the semiconductor substrate. The apparatus further includes a gate conductor formed on the ferroelectric gate insulator. The ferroelectric gate insulator is to separate a bottom surface of the gate conductor and the substrate.

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Portland, OR, United States of America

Joshua M Howard