Axcelis Technologies, Inc.

Varian Semiconductor Equipment Associates, Inc.

Joshua M Abeshaus

Neil J Bassom

Neil K Colvin

Michael Cristoforo

Jordan B Tye

David P Sporleder

Joseph F Valinski

Vladimir Romanov

Pradeepa Kowrikan Subrahmnya

Craig Richard Chaney

Bo H Vanderberg

Edward Eisner

Wilhelm P Platow

Adam M McLaughlin

Steven T Drummond

Camilla Lambert

Caleb Wisch

James A Sargent

Kyle Hinds

Caleb Bell

An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.

Shielded gas inlet for an ion source

A cathode apparatus for an ion source has a cathode with a positioning feature and a blind hole. A cathode holder has an aperture defined by a thru-hole and a locating feature defined along an aperture axis. The thru-hole receives the cathode along the aperture axis in first and second alignment positions based on a rotational orientation of the positioning feature with respect to the locating feature. The first alignment position locates the cathode at a first axial position along the aperture axis. The second alignment position locates the cathode at a second axial position along the axial axis. A filament device has a filament clamp, a filament rod defining a filament axis, and a filament coupled to the filament rod. The filament clamp is in selective engagement with the filament rod to selectively position the filament along the filament axis within the blind hole.

Method for setting gap between cathode and filament

An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

Hydraulic feed system for an ion source

Provided herein are approaches for forming a conduit embedded within a component of a semiconductor manufacturing device (e.g., an ion implanter) using an additive manufacturing process (e.g., 3-D printing), wherein the conduit is configured to deliver a fluid throughout the component to provide heating, cooling, and gas distribution thereof. In one approach, the conduit includes a set of raised surface features formed on an inner surface of the conduit for varying fluid flow characteristics within the conduit. In another approach, the conduit may be formed in a helical configuration. In another approach, the conduit is formed with a polygonal cross section. In another approach, the component of the ion implanter includes at least one of an ion source, a plasma flood gun, a cooling plate, a platen, and/or an arc chamber base.

Semiconductor manufacturing device with embedded fluid conduits

An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

Multiple arc chamber source

An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.

Tetrode extraction apparatus for ion source

A foil liner comprising a plurality of foil layers is disclosed. The foil layers may each be an electrically conductive material that are stacked on top of each other. The spacing between adjacent foil layers may create a thermal gradient such that the temperature of the plasma is hotter than the temperature of the ion source chamber. In other embodiments, the foil layers may be assembly to sink the heat from the plasma so that the plasma is cooler than the temperature of the ion source chamber. In some embodiments, gaps or protrusions are disposed on one or more of the foil layers to affect the thermal gradient. In certain embodiments, one or more of the foil layers may be constructed of an insulating material to further affect the thermal gradient. The foil liner may be easily assembled, installed and replaced from within the ion source chamber.

Foil sheet assemblies for ion implantation

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Salem, MA, United States of America

Joshua M Abeshaus