Qualcomm Incorporated

Microsoft Technology Licensing, LLC

Joshua Lance Puckett

Manish Garg

Jason Philip Martzloff

Harish Shankar

Francois Ibrahim Atallah

Keith Alan Bowman

Benjamin Bowers

Ohsang Kwon

Stephen Edward Liles

Jihoon Jeong

Satyanarayana Sahu

William Goodall, Iii

Rahul Krishnakumar Nadkarni

Anthony Dale Klein

Amlan Ghosh

Amey Kulkarni

Alexander Tessitore

Isaac Turtletaub

Kaushik Viswanathan

Amey Sudhir Kulkarni

A stress-based aging monitor circuit includes a reference ring oscillator circuit and a stressed ring oscillator circuit that each include transistors like the transistors in a circuit to be monitored. Transistors in the stressed ring oscillator circuit receive a negative gate to source voltage bias while the reference ring oscillator is protected from stress. To measure performance degradation due to stress-based aging, the switching frequencies of the reference ring oscillator circuit and the stressed ring oscillator circuit are compared. The reference ring oscillator and the stressed ring oscillator include stress-enhanced inverter circuits configured to amplify stress-based aging effects to increase sensitivity to the performance degradation caused by stress-based aging. Increased sensitivity increases the precision (e.g., higher resolution) of a supply voltage guard band adjustment used to compensate for the performance degradation to reduce or avoid overcompensating for the effects of stress-based aging.

Transistor aging monitor circuit for increased stress-based aging compensation precision, and related methods

Circuits and methods for balancing Bias Temperature Instability (BTI) are disclosed. An inverter circuit comprises an inverter input node configured to receive an inverter input signal, wherein the inverter input node is coupled to gates of an inverter pair, wherein the inverter pair includes an inverter pair n-type metal-oxide-semiconductor (NMOS) transistor and an inverter pair p-type metal-oxide-semiconductor (PMOS) transistor, an inverter output node configured to provide an inverter output signal, wherein the inverter output signal is an inversion of the inverter input signal, and at least one balancing transistor configured to balance a voltage at a source of the inverter pair PMOS, a source of the inverter pair NMOS, or any combination thereof.

Circuits and methods for preventing bias temperature instability

Collision detection systems for detecting read-write collisions in memory systems after word line activation are disclosed. In one aspect, a collision detection system is provided. The collision detection system includes a collision detection circuit for each bit cell row of memory array. Each collision detection circuit is configured to receive a write and read word line signal corresponding to the bit cell row. The collision detection circuit is configured to detect a write and read word line signal pair being active for a write and read operation for the same bit cell row. The collision detection circuit is configured to generate a collision detection signal to notify clients associated with the memory system that a read-write collision occurred. Detecting the read-write collisions after read word line activation reduces or avoids overhead delays in the read path, as opposed to detecting read-write collisions prior to activation of the read word line.

Collision detection systems for detecting read-write collisions in memory systems after word line activation, and related systems and methods

Inversely proportional voltage-delay buffers for buffering data according to data voltage levels are disclosed. In one aspect, an inversely proportional voltage-delay buffer is configured to buffer a data signal for an amount of time that is inversely proportional to a voltage level of the data signal. The inversely proportional voltage-delay buffer includes an inversion circuit and pass circuit. The inversion circuit is configured to generate a control signal that is the logic inverse of the data signal. Notably, the control signal transitions at a rate proportional to the voltage level of the data signal. The pass circuit is configured to generate a weak logic state of the data signal when the data signal and the control signal have the same logic state. The pass circuit is configured to generate a strong logic state of the data signal when the data input and the control signal have opposite logic states.

Inversely proportional voltage-delay buffers for buffering data according to data voltage levels

Aspects disclosed herein describe a keeper circuit that adapts to variations in the fabrication process used to manufacture a dynamic circuit. The different characteristics of the circuit elements may cause a keeper circuit to behave in an unintended manner. In one example, a logical state of the dynamic circuit may be erroneously changed because of a strong (i.e., leaky) NMOS transistor in a pull down or discharge path. An adaptive keeper circuit, however, is designed to prevent such unintended behavior regardless of any change in the characteristics of the circuit elements in the dynamic circuit. The adaptive keeper circuit matches the behavior of the pull down path and prevents the pull down path from erroneously changing the logical state stored by the dynamic circuit.

Adaptive dynamic keeper circuit

At least one configurable circuit cell with a continuous active region includes at least one center subcell, a first-side subcell, and a second-side subcell. Each center subcell includes first and second pMOS transistors and first and second nMOS transistors. The first pMOS transistor has a first-pMOS-transistor gate, source, and drain. The first-pMOS-transistor source is coupled to a first voltage source. The second pMOS transistor has a second-pMOS-transistor gate, source, and drain. The second-pMOS-transistor source is coupled to the first voltage source. The first-pMOS-transistor drain and the second-pMOS-transistor drain are a same drain. The first nMOS transistor has a first-nMOS-transistor gate, source, and drain. The first-nMOS-transistor source is coupled to a second voltage source. The second nMOS transistor has a second-nMOS-transistor gate, source, and drain. The second-nMOS-transistor source is coupled to the second voltage source. The first-nMOS-transistor drain and the second-nMOS-transistor drain are a same drain.

Continuous diffusion configurable standard cell architecture

A register file circuit according to some examples of the disclosure may include a memory cell, a header transistor circuit, and a driver circuit. The header transistor circuit may include one or more PFET headers in series with the PFETs of the memory cell with the gate of the PFET header for the row being written being controlled with a pulse write signal from the driver circuit. In some examples of the disclosure, the header transistor circuit may include an NFET pull-down inserted between a virtual-vdd and ground to discharge the virtual-vdd node reducing the contention during a write operation and a clamping NFET in parallel with the PFET header to clamp the virtual-vdd node to slightly below the threshold voltage of the pull-up PFET in the memory cell to ensure the pull-up PFET is barely off and prevent the virtual-vdd node from discharging all the way to ground.

Register file circuit and method for improving the minimum operating supply voltage

In low power CPUs, the best way to reduce power is to reduce supply voltage. Most low voltage memory arrays use an 8T cell, which has read stability immunity, in order to operate at low voltages. An embodiment of the disclosure determines when a write wordline (WWL) rises. If the determination shows that the WWL has risen, at least one of the plurality of p-channel field effect transistors (pFETS) is disconnected from a voltage supply, and the at least one plurality of n-channel field effect transistors (nFET) passgate transistors are opened.

Low voltage write speed bitcell

Static random access memory (SRAM) global bitline circuits for reducing glitches during read accesses, and related methods and systems are disclosed. A global bitline scheme in SRAM can reduce output load, reducing power consumption. In certain embodiments, SRAM includes an SRAM array. The SRAM includes a global bitline circuit for each SRAM array column. Each global bitline circuit includes memory access circuit that pre-charges local bitlines corresponding to bitcells in SRAM array. The data read from selected bitcell is read from its local bitline onto aggregated read bitline, an aggregation of local bitlines. The SRAM includes bitline evaluation circuit that sends data from aggregated read bitline onto global bitline. Instead of sending data based on rising transition of clock trigger, data is sent onto the global bitline based on falling transition of clock trigger. A global bitline scheme can be employed that reduces glitches and resulting increases in power consumption.

Growing community of inventors

Cary, NC, United States of America

Joshua Lance Puckett