Texas Instruments Corporation

Joshua J Robbins

Sue E Crank

Shawn T Walsh

James B Friedmann

Byron T Ahlburn

Thomas M Parrill

Der'E Jan

John E Campbell

Sue Ellen Cranck

James E Campbell

James B Fredimann

A method is given for removing excess oxide from active areas after shallow trench isolation, without the use of chemical-mechanical polishing. A nitride mask protects active areas during the etch of isolation trenches. The trenches are filled with oxide, using high density plasma deposition, which simultaneously etches, providing a sloping contour around the isolation trenches. A further layer of nitride is used to provide a cap over the trench which seals to the underlying layer of nitride. The cap layer of nitride receives a patterned etch to remove the cap only over the active areas. This allows a selective etch to remove the excess oxide, which can be followed by a selective etch to remove the nitride layers.

Method for trench isolation of semiconductor devices

Growing community of inventors

Dallas, TX, United States of America

Joshua J Robbins