Rohm & Haas Electronic Materials LLC

Dupont Electronic Materials International, LLC

Dow Global Technolgoies LLC

Joshua A Kaitz

Shintaro Yamada

Li Cui

James F Cameron

Suzanne M Coley

Sheng Liu

Mingqi Li

Cong Liu

Emad Aqad

Chunyi Wu

Keren Zhang

Iou-Sheng Ke

Phillip Dene Hustad

Jong Keun Park

Vipul Jain

Irvinder Kaur

Jin Wuk Sung

Thomas Cardolaccia

Christopher D Gilmore

Ke Yang

Amy M Kwok

Xisen Hou

Choong-Bong Lee

Tomas Marangoni

Doris Kang

Dan B Millward

A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14):D-(L-Ar—[X])  (14); anda solvent, wherein, in formula (14), D is a substituted or unsubstituted Corganic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted Corganic group; each Lis independently a single bond or a divalent linking group, when Lis a single bond, D may be a substituted or unsubstituted Ccycloalkyl or substituted or unsubstituted Cheterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic Caromatic group, each X is independently —OR, —SR, or —NRR, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and Rto Rare as provided herein.

Adhesion promoting photoresist underlayer composition

An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic Caromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R, R; Rand Rare as provided herein; optionally, Rand Rcan be taken together form a 5- to 7-membered ring; optionally, one of Rto Rcan be taken together with Rto form a 5- to 7-membered ring; wherein Rand Roptionally may be taken together to form a 5- to 7-membered ring; wherein one of Ror Roptionally may be taken together with Rto form a 5- to 7-membered ring; and when X is O, Rand Rare absent.

Underlayer compositions and patterning methods

Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: Rindependently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Photoresist compositions and methods

A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic Caromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; Ris hydrogen, substituted or unsubstituted Calkyl, substituted or unsubstituted Cheteroalkyl, substituted or unsubstituted Ccycloalkyl, substituted or unsubstituted Cheterocycloalkyl, substituted or unsubstituted Calkenyl, substituted or unsubstituted Calkynyl, substituted or unsubstituted Caryl, substituted or unsubstituted Carylalkyl, substituted or unsubstituted Calkylaryl, substituted or unsubstituted Cheteroaryl, or substituted or unsubstituted Cheteroarylalkyl; and Ris substituted or unsubstituted Calkyl, substituted or unsubstituted Cheteroalkyl, substituted or unsubstituted Ccycloalkyl, substituted or unsubstituted Cheterocycloalkyl, substituted or unsubstituted Calkenyl, substituted or unsubstituted Calkynyl, substituted or unsubstituted Caryl, substituted or unsubstituted Carylalkyl, substituted or unsubstituted Calkylaryl, substituted or unsubstituted Cheteroaryl, or substituted or unsubstituted Cheteroarylalkyl, wherein Rand Rcan be optionally taken together to form a ring.

Coating composition for photoresist underlayer

Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Aromatic resins for underlayers

Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Pattern treatment methods

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Watertown, MA, United States of America

Joshua A Kaitz