Universitat Konstanz

Josh Engelhardt

Barbara Terheiden

Axel Herguth

Daniel Sommer

Sebastian Gloger

Alexander Frey

Yvonne Schiele

What is proposed is a method of producing at least two differently heavily doped subzones () predominantly doped with a first dopant type in a silicon substrate (), in particular for a solar cell. The method comprises: The method uses the observation that a borosilicate glass layer seems to promote an in-diffusion of phosphorus from a gas atmosphere and may substantially facilitate a manufacturing for example of solar cells, in particular back contact solar cells.

Method of producing differently doped zones in a silicon substrate, in particular for a solar cell

A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate () has been provided, various doped regions () are formed in partial regions of a surface of the semiconductor substrate, the various doped regions () differing as regards their doping concentration and/or their doping polarity. The various doped regions () are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts () are formed at least at some of the doped regions (). The etching-back of the various doped regions takes place in a common etching operation in an etching medium. In order that such common etching-back of various doped regions () is possible, it is proposed purposively to adjust both properties of the initially unetched doped regions () and parameters that influence the etching operation with regard to properties of the desired doping profiles within the etched doped regions.

Method for producing solar cells having simultaneously etched-back doped regions

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Constance, Germany

Josh Engelhardt