France Telecom

Josette Charil

Hisao Nakajima

Anne Talneau

Serge Slempkes

The present invention relates to a semiconductor emission device with fast wavelength modulation and constituted by three sections, namely two lateral sections, each having an active layer and a DFB network and which produce an optical gain, connected across a central electroabsorbant section, to which is applied a reverse voltage making it possible to quasi-instantaneously modify the absorption rate in said section.

Semiconductor emission device with fast wavelength modulation

A distributed feedback semiconductor laser structure of the type having a guidance zone providing lateral guidance by refractive index variation, including a phase-shifting diffraction grating extending between two end regions along a light propagation direction, for obtaining coupling within the structure between light propagating in one direction and light propagating in the opposite direction. The diffraction grating is adapted to implement coupling of varying amplitude along the structure between said end regions, and the width of said guidance zone varies such that the phase shift induced by said variation in width compensates for the phase shift induced by the variation in the coupling amplitude.

Growing community of inventors

Meudon, France

Josette Charil