Applied Materials, Inc.

Josephine Ju-Hwei Chang Liu

Kelvin Chan

Alexandros T Demos

Kang Sub Yim

Yi Zheng

Nagarajan Rajagopalan

Sang H Ahn

Vu Ngoc Tran Nguyen

Sang In Yi

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers

Growing community of inventors

Boise, ID, United States of America

Josephine Ju-Hwei Chang Liu