Applied Materials, Inc.

Joseph Yudovsky

Kevin Griffin

Kaushal Gangakhedkar

Alexander S Polyak

Salvador P Umotoy

Steve G Ghanayem

Kenneth Tsai

Mei Yin Chang

Lawrence C Lei

Garry K Kwong

William Tyler Weaver

Mandyam Sriram

Chien-Teh Kao

Maitreyee Mahajani

Tai T Ngo

Kallol Bera

Dien-Yeh Wu

Jason M Schaller

Robert Brent Vopat

Semyon Sherstinsky

Jeffrey Charles Blahnik

Faruk Gungor

Paul F Ma

Visweswaren Sivaramakrishnan

Leon Volfovski

Robert J Mitchell

Ken Kaung Lai

Abraham Ravid

Ronald Lloyd Rose

Malcolm N Daniel, Jr

David Chu

Calvin R Augason

Alex Minkovich

Kenneth S Collins

Srinivas Gandikota

John C Forster

Ling Chen

Avi Tepman

Kelvin Chan

Abhilash J Mayur

Alexander N Lerner

Todd J Egan

Pravin K Narwankar

Girish Anant Dixit

Nir Merry

Ilya Perlov

Dan A Marohl

Hui W Chen

Yihong Chen

Patricia M Liu

Jared Ahmad Lee

Dmitry A Dzilno

Blake R Koelmel

Jonathan Stuart Frankel

Eugene Gantvarg

Anh Ngoc Nguyen

David Masayuki Ishikawa

Gwo-Chuan Tzu

Gary C Ettinger

Quoc Truong

Colin Costano Neikirk

Toshiyuki Nakagawa

Younes Achkire

Ying Yu

Quyen Pham

Hyman Lam

Ludovic Godet

Michael Robert Rice

Li-Qun Xia

Rutger Meyer Timmerman Thijssen

Shamouil Shamouilian

Arnold Kholodenko

Jun Zhao

Yi-Chiau Huang

Vinay K Shah

Xiaoxiong Yuan

Sean M Seutter

Joel M Huston

Allen L D'Ambra

Talex Sajoto

Umesh M Kelkar

Michael Johnson

Kenric T Choi

Moris Kori

Andrew J Constant

Paul F Smith

Aaron Webb

Nitin Khurana

Alexander Tam

Michael P Karazim

Leonid Selyutin

Jacob W Smith

Son Trinh

Olkan Cuvalci

Anqing Cui

R Suryanarayanan Iyer

Hyman W H Lam

Ravi Jallepally

Efrain Quiles

Adam Brailove

Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Apparatus and methods for semiconductor processing

Apparatus and methods for wafer chucking on a susceptor for ALD

Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Enhanced spatial ALD of metals through controlled precursor mixing

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Contour pocket and hybrid susceptor for wafer uniformity

Apparatus and methods of processing a substrate in a carousel processing chamber are described. A wafer pedestal has a support surface with a support shaft extending below the wafer pedestal. A roller pinion wheel is below the wafer support around the support shaft. The roller pinion wheel has a plurality of spokes in contact with the support shaft and a wheel with a plurality of roller pinions spaced around the outer periphery of the wheel. Processing chambers incorporating the wafer pedestal and processing methods using the wafer pedestal for in-situ rotation are also described.

In-situ wafer rotation for carousel processing chambers

Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Injector for batch processing and methods of use

Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Position and temperature monitoring of ALD platen susceptor

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. The cavities are formed in a body of the chucking apparatus. In one embodiment, a first plurality of ports are formed in a chucking surface of the body and extend to a bottom surface of the body. In another embodiment, a second plurality of ports are formed in a bottom surface of the plurality of cavities and extend through the body to a bottom surface of the body.

Patterned vacuum chuck for double-sided processing

A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated and coupled to the motors, a controller configured to cause the motors to rotate the chamber in a first direction about an axial axis at a rotation speed sufficient to force the particles to be centrifuged against an inner diameter of the chamber, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

Rotary reactor for uniform particle coating with thin films

A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors, a controller configured to cause the motors to rotate the rotary vacuum chamber about an axial axis of the rotary vacuum chamber such that the particles undergo tumbling agitation, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

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Campbell, CA, United States of America

Joseph Yudovsky