Micron Technology Incorporated

Joseph Wiggins

Janos Fucsko

Prashant Raghu

Grady S Waldo

The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NHF and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NHF and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.

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Boise, ID, United States of America

Joseph Wiggins