University of Illinois

Tiptek, LLC

Joseph W Lyding

Karl Hess

Jinju Lee

Jeffrey S Moore

Larry James Markoski

Gregory S Girolami

Scott P Lockledge

Scott W Schmucker

Gang Wang

Yaofeng Chen

A method of making a carbon-metal oxide composite electrode for a supercapacitor includes continuously injecting a carbon material solution into a coagulation solution, where the carbon material solution comprises a carbon source and a liquid, and the coagulation solution comprises a metal nitrate or chloride and an organic solvent. An extruded structure comprising the metal nitrate or chloride interspersed with carbon is formed from the continuous injection. The extruded structure is annealed under conditions sufficient to convert the metal nitrate or chloride to metal oxide. Thus, a composite structure comprising the metal oxide and the carbon is formed, where the metal oxide is uniformly dispersed within the composite structure.

Carbon-metal oxide composite electrode for a supercapacitor and method of making a carbon-metal oxide composite electrode

Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Scanning probe and electron microscope probes and their manufacture

The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires and semiconductors in other forms.

Nanometer-scale sharpening of conductor tips

An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.

Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same

The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.

Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Semiconductor devices, and methods for same

Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.

Deuterium treatment of semiconductor device

Semiconductor devices and methods for same

Forming of deuterium containing nitride spacers and fabrication of

Deuterium-treated semiconductor devices

A thermally compensated tube scanner scanning tunneling microscope utilizes two concentric piezoelectric tubes, one for scanning and one for coarse translation as well as fine adjustment of sample position while in tunneling range. There are no mechanical components such as springs, levers, gears, or stepper motors which are known to result in considerable vibration sensitivity and thermal drift. Consequently, the standard mode of atomic resolution operation for the device is without vibration isolation and with a thermal drift of less than 1 angstrom per hour.

Growing community of inventors

Champaign, IL, United States of America

Joseph W Lyding