International Business Machines Corporation

Joseph Thomas Kocis

Kenneth Jay Stein

Richard Paul Volant

Kevin Shawn Petrarca

David Louis Harame

Nancy Anne Greco

Gary Robert Hueckel

Dominique Nguyen Ngoc

Donald Francis Canaperi

Seshadri Subbanna

David R Greenberg

Basanth Jagannathan

Shwu-Jen Jeng

William C Wille

David Angell

Samuel C Ramac

David M Rockwell

James Anthony Tornello

Waldemar Walter Kocon

An interconnection wiring system incorporating two levels of interconnection wiring separated by a first dielectric, a capacitor formed by a second dielectric, a bottom electrode of the lower interconnection wiring or a via and a top electrode of the upper interconnection wiring or a separate metal layer. The invention overcomes the problem of leakage current and of substrate stray capacitance by positioning the capacitor between two levels of interconnection wiring.

Metal-insulator-metal capacitor

A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

MEMS encapsulated structure and method of making same

A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.

Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

A method of fabricating and the structure of a micro-electromechanical switch (MEMS) device provided with self-aligned spacers or bumps is described. The spacers are designed to have an optimum size and to be positioned such that they act as a detent mechanism for the switch to minimize problems caused by stiction. The spacers are fabricated using standard semiconductor techniques typically used for the manufacture of CMOS devices. The present method of fabricating these spacers requires no added depositions, no extra lithography steps, and no additional etching.

Micro electromechanical switch having self-aligned spacers

A process for removing a resist material containing a chlorine residue from an organic substrate. The process first removes the chlorine residue from the resist material by exposing the resist material to an abbreviated plasma which also removes a portion of the resist material. The remainder of the resist material is removed by exposing the resist material to a solvent which does not affect the organic substrate.

Process for resist clean up of metal structures on polyimide

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Pleasant Valley, NY, United States of America

Joseph Thomas Kocis