Honeywell International Inc.

Joseph T Kennedy

Teresa Baldwin

Nigel P Hacker

Richard A Spear

Bo Li

Nancy E Iwamoto

Jason T Stuck

Wei T Huang

Sudip Mukhopadhyay

Michael D Goodner

Victor Y Lu

Makarem A Hussein

Roger Leung

Songyuan Xie

Brian J Daniels

Jude A Dunne

Yamini Pandey

Mark A Fradkin

Teresa Baldwin-Hendricks

Kim Do

Henry Chung

Tadashi Nakano

Jelena Sepa

Helen Xiao Xu

William B Bedwell

Anna M George

Desaraju Varaprasad

Edward W Rutter, Jr

Ronald R Katsanes

Ahila Krishnamoorthy

Arlene Suedemeyer

Mello Hebert

A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one, or combination of, a first fill material in the form of a phenol-formaldehyde polymer and/or a second fill material in the form of a polyalkene carbonate (PAC). The solvent is then volatized to deposit the fill materials in substantially solid form within the spaces. The fill materials may be removed by known plasma etch process via a high etch rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Fill material to mitigate pattern collapse

A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.

Gap filling dielectric materials

Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Anti-reflective coating for photolithography and methods of preparation thereof

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

Spin-on anti-reflective coatings for photolithography

Polymer formulations are disclosed and described herein that comprise: at least one polymer comprising at least one hydroxy functional group, at least one acid source, and at least one acid-activated crosslinker that reacts with the polymer. In contemplated embodiments, these polymer formulations are curable at relatively low temperatures, as compared to those polymer formulations not comprising contemplated crosslinkers. Transparent films formed from these contemplated formulations are also disclosed. Organic transparent film compositions are also disclosed that comprise: at least one at least one phenol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming organic transparent films with improved transmittance by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of less than about 200&#xb0; C. Inorganic transparent film compositions are disclosed that include: at least one silanol-based polymer, at least one solvent; at least one acid-activated crosslinker; and at least one acid source. Methods of forming inorganic transparent films are disclosed by depositing on a substrate the formulations disclosed herein and curing the formulations or compositions at a temperature of 200&#xb0; C. or less.

Processable inorganic and organic polymer formulations, methods of production and uses thereof

Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another. Methods of producing a composition for tri-layer patterning applications includes: providing a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, providing at least one condensation catalyst, providing at least one solvent, providing at least one pH modifier, blending the formulated polymer and part of the at least one solvent in a reaction vessel to form a reactive mixture; and incorporating the at least one pH modifier, the at least one condensation catalyst and the remaining at least one solvent into the reactive mixture to form the composition.

Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof

A coating material is described herein that includes at least one inorganic compound, and at least one densifying agent, wherein the densifying agent increases the density of the coating material as compared to the density of the at least one inorganic compound. A method of producing a coating material is described herein that includes: providing at least one inorganic compound, providing at least one densifying agent, combining the at least one inorganic compound with the at least one densifying agent to form the coating material, wherein the densifying agent increases the density of the coating material as compared to the density of the at least one inorganic compound.

Coatings and hard mask compositions for integrated circuit applications methods of production and uses thereof

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

Bottom antireflective coating (BARC) that exhibit enhanced wet strip rates, BARC compositions for fabricating such BARCs, and methods for manufacturing such BARC compositions are provided. According to one exemplary embodiment, a bottom antireflective coating (BARC) composition comprises an inorganic-based compound, an absorbing material, and a wet strip-rate modifier combination. The wet strip-rate modifier composition comprises a combination of a short chain linear alcohol and dipropylene glycol (DPG), a combination of the short chain linear alcohol and tetraethylene glycol (TEG), a combination of DPG and TEG, or a combination of the short chain linear alcohol, DPG, and TEG.

Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same

A planarization composition is disclosed herein that comprises: a) a structural constituent; and b) a solvent system, wherein the solvent system is compatible with the structural constituent and lowers the lowers at least one of the intermolecular forces or surface forces components of the planarization composition. A film that includes this planarization composition is also disclosed. In addition, another planarization composition is disclosed herein that comprises: a) a cresol-based polymer compound; and b) a solvent system comprising at least one alcohol and at least one ether acetate-based solvent. A film that includes this planarization composition is also disclosed. A layered component is also disclosed herein that comprises: a) a substrate having a surface topography; and b) a planarization composition or a film such as those described herein, wherein the composition is coupled to the substrate. Methods of forming a planarization compositions are also disclosed herein that comprise: a) providing a structural constituent; b) providing a solvent system, wherein the solvent system is compatible with the structural constituent and lowers at least one of the intermolecular forces or surface forces components of the planarization composition; and c) blending the structural constituent and the solvent system to form a planarization composition. Methods of forming a film are also disclosed that comprise: a) providing a planarization composition such as those disclosed herein; and b) evaporating at least part of the solvent system to form a film.

Planarization films for advanced microelectronic applications and devices and methods of production thereof

A sacrificial coating material includes: at least one inorganic compound, and at least one material modification agent, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry. A method of producing a sacrificial coating material includes: providing at least one inorganic compound, providing at least one material modification agent, combining the at least one inorganic compound with the at least one material modification agent to form the sacrificial coating material, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry, but not organic casting solvents commonly used in organic BARC materials.

Coating composition optimization for via fill and photolithography applications and methods of preparation thereof

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Spin-on-glass anti-reflective coatings for photolithography

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

Growing community of inventors

San Jose, CA, United States of America

Joseph T Kennedy