Applied Materials, Inc.

Joseph Stevens

Donald J Olgado

Yezdi N Dordi

Mark Robert Denome

Michael N Sugarman

Donald J K Olgado

Peter W Hey

Dmitry Lubomirsky

Robin W Cheung

Avi Tepman

Ashok K Sinha

Ratson Morad

Dan A Marohl

Ho Seon Shin

Dan Carl

George Birkmaier

Eugene Ravinovich

Howard E Grunes

Allen L D'Ambra

Yeuk-Fai Edwin Mok

Peter Satitpunwaycha

Ian A Pancham

Bernardo Donoso

H Peter W Hey

Yevgeniy Rabinovich

Mark Lloyd

Sandy S Chao

Alexander Sou-Kang Ko

Alexander N Lerner

Shamouil Shamouilian

Girish Anant Dixit

Jon T Clinton

Norman Cowan

Radha Nayak

Anna Marie Lloyd, Legal Representative

Chien-Shien Tzou

Anada H Kumar

Ricardo Leon

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Electro-chemical deposition system

An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.

Flow diffuser to be used in electro-chemical plating system

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a 'patch' of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

Electroless deposition apparatus

A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electrochemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be on a separate platform. The dosing unit in one embodiment comprises a pressurized flow line.

Apparatus for electro chemical deposition

A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

Electroless plating system

Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.

Apparatus and method for rinsing substrates

A non-contact apparatus and method for removing a metal layer from a substrate are provided. The apparatus includes a rotatable anode substrate support member configured to support a substrate in a face-up position and to electrically contact the substrate positioned thereon. A pivotally mounted cathode fluid dispensing nozzle assembly positioned above the anode substrate support member is also provided. A power supply in electrical communication with the anode substrate support member and the cathode fluid dispensing nozzle is provided, and a system controller configured to regulate at least one of a rate of rotation of the anode substrate support member, a radial position of the cathode fluid dispensing nozzle, and an output power of the power supply is provided. The method provides for the removal of a metal layer from a substrate by rotating the substrate in a face up position on a rotatable substrate support member. A cathode fluid dispensing nozzle is positioned over a central portion of the substrate and a metal removing solution is dispensed from the cathode fluid dispensing nozzle onto the central portion of the substrate. An electrical bias is applied between the substrate and the cathode fluid dispensing nozzle, which operates to deplate the metal layer below the fluid dispensing nozzle.

Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection

An apparatus and associated method for securing a wafer to a SRD spider, the SRD spider has a plurality of spider arms. The apparatus includes a plurality of spaced surfaces disposed on a distal end of one of the spider arms, each of the surfaces being spaced perpendicularly from the longitudinal axis of the spider arm. In one aspect, the two surfaces are positioned to limit production of a wedging force between that spaced surface and the wafer. In one embodiment, a post at least partially defines each one of the plurality of spaced surfaces.

Dual post centrifugal wafer clip for spin rinse dry unit

An apparatus and associated method for deposition of metal ions contained in an electrolyte solution to form a metal film primarily on a seed layer formed on at least a first side of a substrate. The substrate has a second side that is opposed the first side and an edge joining the first side and the second side. The apparatus comprises a substrate holder system and an electric contact element. The electric contact element physically contacts one of the second side or the edge of the substrate. In one aspect, the substrate is rotated about its vertical axis when the seed layer of substrate is immersed in the electrolyte solution during the metal film deposition. In another aspect, the substrate is not rotated about its vertical axis when the seed layer on the substrate is immersed in the electrolyte solution during the metal film deposition. In different embodiments, the electric contact element contacts the seed layer on the second side of the substrate, a diffusion barrier layer on the second side of the substrate, or the seed layer on the edge of the substrate.

Electric contact element for electrochemical deposition system and method

Flow diffuser to be used in electro-chemical plating system and method

An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in the electrochemical plating system by tilting the substrate as it enters the electrolyte solution to limit the trapping or formation of air bubbles in the electrolyte solution between the substrate and the substrate holder. In another aspect, an apparatus is provided for electroplating that comprises a cell, a substrate holder, and an actuator. The actuator can displace the substrate holder assembly in the x and z directions and also tilt the substrate. In another aspect, a method is provided of driving a meniscus formed by electrolyte solution across a surface of a substrate. The method comprises enhancing the interaction between the electrolyte solution meniscus and the surface as the substrate is immersed into the electrolyte solution.

Method and associated apparatus for tilting a substrate upon entry for metal deposition

In one aspect, a vacuum chuck supports a substrate on an end effector, the vacuum chuck comprising a position reference structure and a suction cup. The position reference structure is mounted to the surface and comprises a reference surface. The suction cup is located proximate the reference surface and comprising a suction mount. In another aspect, a method of chucking a substrate to a vacuum chuck is provided. The vacuum chuck comprises a suction cup and a position reference structure. The method comprises attaching the suction cup to the substrate to form a seal therebetween. The suction cup is deformed such that the substrate contacts the position reference structure. The substrate is then leveled on the position reference structure.

Self positioning vacuum chuck

Embodiments of the invention generally provide an etchant mixing assembly for a semiconductor processing system. The etchant mixing assembly includes at least one acid source, at least one oxidizer source, a mixing tank selectively in fluid communication with the at least one acid source and the at least one oxidizer source, and a mixed etchant tank in fluid communication with the mixing tank. Additionally, a system controller configured to sense a low level of fluid in the mixed etchant tank, cause a fresh fluid solution to be mixed in the mixing tank, and cause the fresh fluid solution to the communicated to the mixed etchant tank is also provided in the etchant mixing assembly.

Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits

A system is provided in which a smaller flow of deposition solution is diverted from a larger flow of deposition solution flowing on an electro-chemical deposition tool platform. The smaller flow is diverted to a dosing unit which may be on a separate platform. The dosing unit in one embodiment comprises a pressurized flow line.

Apparatus and method for electro chemical deposition

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San Jose, CA, United States of America

Joseph Stevens